Hydrostatic pressure effects onto the electronic structure and differential capacitance profile for a metal/δ-doped-GaAs.

Abstract

A metal-semiconductor contact with a n-type δ-doped quantum well of impurities (metal/δ-doped GaAs) was studied numerically to extract electronic properties such as energy levels and the corresponding wave functions of each level as well as the differential capacitance for the structure. In this work we reported these properties as a function of the hydrostatic pressure (p). We used the effective mass approximation for the calculation of the electronic structure and consider the hydrostatic pressure effects on the basic semiconductor parameters as is the effective mass for the conduction electrons and the static dielectric constant, finally we also take into account an experimental expression that dependency of the Schottky barrier height as a function of this external factor, at least for values between 0 and 6 kar. We showed that the linear behavior for C⁻², obtained by pervious works, is switched over a parabolic-like curve due to the δ-doped two-dimensional impurities density.