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Hysteresis Offset in Stress Induced Polarization-Graded Ferroelectrics
Published online by Cambridge University Press: 11 February 2011
Abstract
Polarization-graded ferroelectrics and their electrically active counterparts, graded ferroelectric devices (GFDs) and transpacitors has been achieved in a number ways, including a variation in the composition of the material, or impressing a temperature gradients across the structure. In this article, we report how these same devices can be formed from homogeneous ferroelectric films of lead strontium titanate by imposing stress gradients on the materials normal to their electrode surfaces. A qualitative description of asymmetric hysteresis behavior based on a modified Landau potential is provided.
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- Copyright © Materials Research Society 2003