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Impact of H2-preannealing of the Sapphire Substrate on the Crystallization of Low-Temperature-Deposited AlN Buffer Layer

Published online by Cambridge University Press:  01 February 2011

Michinobu Tsuda ,
Krishnan Balakrishnan ,
Motoaki Iwaya ,
Satoshi Kamiyama ,
Hiroshi Amano  and
Isamu Akasaki
Michinobu Tsuda
Affiliation:
Single Crystal Division, Kyocera Corporation, 1166–6, Nagatanino, Hebimizo-cho, Youkaichi-city, Shiga 527–8555, Japan Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Krishnan Balakrishnan
Affiliation:
Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Motoaki Iwaya
Affiliation:
Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Satoshi Kamiyama
Affiliation:
Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Hiroshi Amano
Affiliation:
Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Isamu Akasaki
Affiliation:
Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
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Abstract

The effect of H2-preannealing of sapphire substrate on low-temperature (LT- ) AlN buffer layer deposited by metalorganic vapor phase epitaxy is investigated. Crystallinity of LT-AlN drastically changes with preannealing temperature variation. It is found that H2-preannealing of sapphire substrate is a requisite to get a better quality LT-AlN and as a consequence it leads to growth of better quality GaN epi-layer on it.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.30
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y.: Appl. Phys. Lett. 48, 353–355 (1986)Google Scholar
2. Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K. and Sawaki, N.: J. Cryst. Growth 98, 209–219 (1989)Google Scholar
3. Tabuchi, M., Kyouzu, H., Takeda, Y., Yamaguchi, S., Amano, H. and Akasaki, I.: J. Cryst. Growth 237, 1133–1138 (2002)Google Scholar
4. Sumiya, M., Tanaka, M., Ohtsuka, K., Fuke, S., Ohnishi, , Ohkubo, T., Yoshimoto, I., Koinuma, H. and Kawasaki, M.: Appl. Phys. Lett. 75, 674–676 (1999)Google Scholar
5. Yoshimoto, M., Maeda, T., Ohnishi, T., Koinuma, H., Ishiyama, O., Shinohara, M., Kubo, M., Miura, R. and Miyamoto, A.: Appl. Phys. Lett., 67, 2615–2617 (1995)Google Scholar
6. Tsuda, M., Watanabe, K., Kamiyama, S., Amano, H., Akasaki, I., Liu, R., Bell, A. and Ponce, F. A.: Appl. Surf. Sci., 216, 585–589 (2003)Google Scholar
7. Koide, Y., Itoh, N., Itoh, K., Sawaki, N. and Akasaki, I.: Jpn. J. Appl. Phys. 27, 1156–1161 (1988)Google Scholar