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Improved Deposition Process of CVD-(Ba,Sr)TiO3 on Ru

Published online by Cambridge University Press:  21 March 2011

M. Tarutani ,
T. Sato ,
M. Yamamuka ,
T. Kawahara ,
T. Horikawa ,
T. Takenaga ,
Y. Yoneda ,
T. Kuroiwa ,
S. Matsuno  and
T. Shibano
M. Tarutani
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corp., Hyogo, JAPAN
T. Sato
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corp., Hyogo, JAPAN
M. Yamamuka
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corp., Hyogo, JAPAN
T. Kawahara
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corp., Hyogo, JAPAN
T. Horikawa
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corp., Hyogo, JAPAN
T. Takenaga
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corp., Hyogo, JAPAN
Y. Yoneda
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corp., Hyogo, JAPAN
T. Kuroiwa
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corp., Hyogo, JAPAN
S. Matsuno
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corp., Hyogo, JAPAN
T. Shibano
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corp., Hyogo, JAPAN
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Abstract

(Ba,Sr)TiO3 [BST] films were deposited by the flash vaporization CVD method with a unique liquid delivery system. An inductively coupled plasma mass spectrometry [ICP-MS] analysis revealed the decline of (Ba+Sr)/Ti molar ratio of the initial BST-layer on Ru. By readjusting the flow ratio of liquid sources and using a two-step deposition method, we obtained 30-nm-thick BST films with uniform composition profile, exhibiting good electrical properties. The leakage property, however, was severely deteriorated in BST films less than 24 nm thick. A SEM observation showed the presence of micro-roughness or micro-hillocks in these films, which were confirmed to be caused by Ru oxidation. Therefore, an annealing process of the Ru electrode was added for its planarization, and the CVD process was also improved. As a result, we obtained smooth and finely crystallized ∼ 20-nm-thick BST films with good electrical properties of equivalent SiO2 thickness (teq) ∼ 0.45 nm and leakage current < 1 × 10−7 A/cm2. We also measured properties of BST films deposited on the 3-D Ru electrode. The results are briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC6.5.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Yuuki, A., Yamamuka, M., Makita, T., Horikawa, T., Shibano, T., Hirano, N., Maeda, H., Mikami, N., Ono, K., Ogata, H. and Abe, H., Tech. Dig. IEDM 1995, pp.115–118.Google Scholar
2. Yamamichi, S., Leisaicherre, P-Y., Yamaguchi, H., Takemura, K., Sone, S., Yabuta, H., Sato, K., Tamura, T., Nakajima, K., Ohnishi, S., Tokashiki, K., Hayashi, Y., Kato, Y., Miyasaka, Y., Yoshida, M., and Ono, H., Tech. Dig. IEDM 1995, pp.119–122.Google Scholar
3. Ono, K., Horikawa, T., Shibano, T., Mikami, N., Kuroiwa, T., Kawahara, T., Matsuno, S., Uchikawa, F., Satoh, S. and Abe, H., Tech. Dig. IEDM 1998, pp.803–806.Google Scholar
4. Horikawa, T., Tarutani, M., Kawahara, T., Yamamuka, M., Hirano, N., Sato, T., Matsuno, S., Shibano, T., Uchikawa, F., Ono, K. and Oomori, T., Mat. Res. Soc. Symp. Proc., 541, 3–10 (1999).10.1557/PROC-541-3Google Scholar
5. Kawahara, T., Yamamuka, M., Makita, T., Tsutahara, K., Yuuki, A., Ono, K. and Matsui, Y., Jpn. J. Appl. Phys., 33, 5897–5902 (1994).10.1143/JJAP.33.5897Google Scholar
6. Kawahara, T., Yamamuka, M., Yuuki, A. and Ono, K., Jpn. J. Appl. Phys., 34, 5077–5082 (1995).Google Scholar
7. Yamamuka, M., Kawahara, T., Yuuki, A. and Ono, K., Jpn. J. Appl. Phys., 35, 2530–2535 (1996).10.1143/JJAP.35.2530Google Scholar
8. Kawahara, T., Yamamuka, M., Tanimura, J., Tarutani, M., Kuroiwa, T., Horikawa, T. and Ono, K., Jpn. J. Appl. Phys., 36, 5874–5878 (1997).10.1143/JJAP.36.5874Google Scholar
9. Kawahara, T., Yamamuka, M., Yuuki, A. and Ono, K., Jpn. J. Appl. Phys., 35, 4880–4885 (1996).10.1143/JJAP.35.4880Google Scholar