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Improved Electrical and Transport Characteristics of Amorphous Silicon by Enriching with Microcrystalline Silicon

Published online by Cambridge University Press:  16 February 2011

A. Mireshghi ,
W.S. Hong ,
J. Drewery ,
T. Jing ,
S.N. Kaplan ,
H.K. Lee  and
V. Perez-Mendez
A. Mireshghi
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
W.S. Hong
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
J. Drewery
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
T. Jing
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
S.N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
H.K. Lee
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
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Abstract

We have deposited n-i-p diodes with microcrystalline intrinsic layers for radiation detection applications. The diodes show interesting electrical characteristics which have not been reported before. From TOF Measurement for our best samples we obtained μe values which are about 3 times larger than our standard a-Si:H. for μτ values approximately a factor of 2 improvement was observed. The N*D values derived from hole-onset measurements show lower ionized dangling bond density than normal a-Si:H Material. We have proposed a simple model which can very well explain the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 377
Copyright
Copyright © Materials Research Society 1994

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References

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