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Improved properties of TaOx films doped with Al and N

Published online by Cambridge University Press:  10 February 2011

R. B. van Dover ,
L. F. Schneemeyer ,
R. M. Fleming  and
D. J. Werder
R. B. van Dover
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
L. F. Schneemeyer
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
R. M. Fleming
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
D. J. Werder
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
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Abstract

Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with ∼2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of ∼750 individual capacitors in each experiment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 561
Copyright
Copyright © Materials Research Society 1999

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References

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