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In Situ Mass Spectroscopy of Recoiled Ion Studies of Degradation Processes in SrBi2Ta2O9 Thin Films During Hydrogen Gas Annealing

Published online by Cambridge University Press:  10 February 2011

J. Im ,
O. Auciello ,
A.R. Krauss ,
D.M. Gruen ,
R.P.H. Chang ,
S.H. Kim  and
A.I. Kingon
J. Im
Affiliation:
Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, IL6049 Materials Science and Engineering Department, Northwestern University, Evanston, IL 60208
O. Auciello
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL6049
A.R. Krauss
Affiliation:
Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, IL6049
D.M. Gruen
Affiliation:
Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, IL6049
R.P.H. Chang
Affiliation:
Materials Science and Engineering Department, Northwestern University, Evanston, IL 60208
S.H. Kim
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh, NC 27695
A.I. Kingon
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh, NC 27695
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Abstract

It is known that the forming gas (N2-H2 mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of SrBi2Ta2O9 (SBT) ferroelectric capacitors due mainly to the interaction of H2 with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (∼500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700–800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 287
Copyright
Copyright © Materials Research Society 1999

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References

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