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Influence of Defects on Excess Charge Carrier Kinetics Studied by Transient PC and Transient PA

Published online by Cambridge University Press:  15 February 2011

H. Feist ,
M. Kunst  and
C. Swiatkowski
H. Feist
Affiliation:
Hahn-Meitner-Institute, Dept. CS, Glienicker Str. 100,14109 Berlin, Germany
M. Kunst
Affiliation:
Hahn-Meitner-Institute, Dept. CS, Glienicker Str. 100,14109 Berlin, Germany
C. Swiatkowski
Affiliation:
Hahn-Meitner-Institute, Dept. CS, Glienicker Str. 100,14109 Berlin, Germany
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Abstract

By comparison of transient photoconductivity (TPC) and transient photoinduced absorption (PA) the influence of the density of states in the bandgap on excess charge carrier kinetics is studied for a-Si:H films deposited at different temperatures and for state of the art a-Si:H films in two different states of light soaking. In both series the rising deep defect density leads to an enhancement of electron trapping rather than recombination via deep defects. The samples deposited at temperatures lower than 250°C additionally show a lower effective electron mobility, i.e. a broader conduction band tail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 203
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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