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Influence of Deposition Conditions on the 1/f Noise in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

P. W. West ,
D. Quicker ,
H. M. Dyalsingh  and
J. Kakalios
P. W. West
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
D. Quicker
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
H. M. Dyalsingh
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
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Abstract

The electronic properties of a series of n-type doped hydrogenated amorphous silicon (a-Si:H) films grown with deposition rates ranging from 2 Å/s to 33 Å/s have been studied. Infrared absorption spectroscopy shows an increase in S1-H2 content with deposition rate, concurrent with a decreasing conductivity, increasing thermal equilibration relaxation time, and increasing disorder at the mobility edge as measured by the difference in thermopower and dark conductivity activation energies. The current 1/f noise properties become highly nonstationary, with increased variability and inapplicability of statistical analysis as the deposition rate increases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 215
Copyright
Copyright © Materials Research Society 1997

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References

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