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Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS diodes

Published online by Cambridge University Press:  01 February 2011

Joshua David Caldwell ,
Robert E Stahlbush ,
Eugene A. Imhoff ,
Orest J. Glembocki ,
Karl D. Hobart ,
Marko J. Tadjer ,
Qingchun Zhang ,
Mrinal Das  and
Anant Agarwal
Joshua David Caldwell
Affiliation:
jcaldwel@ccs.nrl.navy.mil, Naval Research Laboratory, Electronic Science and Technology, 4555 Overlook Ave, S.W., Washington, DC, 20375, United States, 202-404-6209
Robert E Stahlbush
Affiliation:
stahlbush@nrl.navy.mil, Naval Research Laboratory, 4555 Overlook Ave, S.W., Washington, DC, 20375, United States
Eugene A. Imhoff
Affiliation:
eimhoff@ccs.nrl.navy.mil, Naval Research Laboratory, 4555 Overlook Ave, S.W., Washington, DC, 20375, United States
Orest J. Glembocki
Affiliation:
orest.glembocki@nrl.navy.mil, Naval Research Laboratory, 4555 Overlook Ave, S.W., Washington, DC, 20375, United States
Karl D. Hobart
Affiliation:
karl.hobart@nrl.navy.mil, Naval Research Laboratory, 4555 Overlook Ave, S.W., Washington, DC, 20375, United States
Marko J. Tadjer
Affiliation:
marko.tadjer@gmail.com, University of Maryland, Electrical Engineering Department, College Park, MD, 20740, United States
Qingchun Zhang
Affiliation:
Jon_Zhang@cree.com, Cree Inc., 3026 E. Cornwallis Rd, Research Triangle Park, NC, 27709, United States
Mrinal Das
Affiliation:
Mrinal_Das@cree.com, Cree Inc., 3026 E. Cornwallis Rd, Research Triangle Park, NC, 27709, United States
Anant Agarwal
Affiliation:
anant_agarwal@cree.com, Cree Inc., 3026 E. Cornwallis Rd, Research Triangle Park, NC, 27709, United States
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Abstract

The forward voltage drop (Vf) increase observed in 4H-SiC bipolar devices such as pin diodes due to recombination-induced Shockley stacking fault (SSF) creation and expansion has been widely discussed in the literature. It was long believed that the deleterious affect of these defects was limited to bipolar devices. However, it was recently reported that forward biasing of the body diode of a 10kV 4H-SiC DMOSFET led to similar Vf increases in the body diode I-V curve as well as a corresponding degradation in the majority carrier conduction characteristics as well and this degradation was believed to be due to the creation and expansion of SSFs during the body diode forward biasing. Here we report measurements comparing the influence of similar stressing, along with annealing and current-induced recovery experiments in DMOSFETs and merged pin-Schottky diodes with the previously reported results of these experiments in 4H-SiC pin diodes. The results of these experiments provide sufficient support that the observed degradation in the majority carrier conduction characteristics is the result of SSF expansion.

Keywords

devicesdefectssemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D10-04
Copyright
Copyright © Materials Research Society 2008

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References

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