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Influence of the Cu Content on Structural and Vibrational Properties in Polycrystalline CuGaSe2 Thin Films

Published online by Cambridge University Press:  31 January 2011

Wolfram Witte ,
Robert Kniese  and
Michael Powalla
Wolfram Witte
Affiliation:
wolfram.witte@zsw-bw.de, Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Stuttgart, Germany
Robert Kniese
Affiliation:
robert.kniese@zsw-bw.de, Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Stuttgart, Germany
Michael Powalla
Affiliation:
michael.powalla@zsw-bw.de, Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Stuttgart, Germany
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Abstract

We studied CuGaSe2 (CGS) thin films with different Cu contents by means of X-ray diffraction (XRD) and micro-Raman spectroscopy. The CGS absorbers were deposited by co-evaporation on Mo/glass substrates. We found a clear shift of the CGS Raman mode frequencies to lower values with increasing Cu/Ga ratio. This is in direct correlation with the increasing lattice constants a and c extracted from XRD patterns. Influence of stress on the obtained results can be neglected, because very small stress values below 50 MPa were determined with the sin2Ψ method.

Keywords

thin filmRaman spectroscopyx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M05-20
Copyright
Copyright © Materials Research Society 2009

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References

[1] Young, D.L. Keane, J. Duda, A. AbuShama, J. Perkins, C.L. Romero, M. Noufi, R. Prog. Photovolt. Res. Appl. 11 (2003) 535.Google Scholar
[2] G. Marín, Tauleigne, S. Wasim, S.M. Guevara, R. Delgado, J.M. Rincón, C., Mora, A.E. Pérez, G. Sánchez, Mat. Res. Bull. 33 (1998) 1057.Google Scholar
[3] Lehmann, S. Bär, M., Marrón, D. Fuertes, Pistor, P. Wiesner, S. Rusu, M. Kötschau, I., Lauermann, I. Grimm, A. Sokoll, S. Fischer, C.H. Schedel-Niedrig, T., Lux-Steiner, M.C., Jung, C. Thin Solid Films 511-512 (2006) 623.Google Scholar
[4] Joint Committee on Powder Diffraction Standards # 06-0680.Google Scholar
[5] Chakrabarti, R. Maity, A.B. Maiti, B. Dutta, J. Chaudhuri, S. Pal, A.K. Vacuum 47 (1996) 1371.Google Scholar
[6] Barghout, K. Chaudhuri, J. J. Mat. Sci. 39 (2004) 5817.Google Scholar
[7] Chung, D.H. Buessem, W.R. J. Appl. Phys. 38 (1967) 2535.Google Scholar
[8] Pawley, G.S. J. Appl. Cryst. 14 (1981) 357.Google Scholar
[9] Kötschau, I., Schock, H.W. J. Phys. Chem. Solids 64 (2003) 1559.Google Scholar
[10] Bodnar, I.V. Golubev, L.V. Plotnichenko, V.G. Smolyaninova, E.A. Phys. Stat. Sol. (b) 105 (1981) K111.Google Scholar
[11] Rincón, C., Ramírez, F.J., J. Appl. Phys. 72 (1992) 4321.Google Scholar
[12] Xue, C. Papadimitriou, D. Raptis, Y.S. Esser, N. Richter, W. Siebentritt, S. Lux-Steiner, M.C., J. Appl. Phys. 94 (2003) 4341.Google Scholar
[13] Ramírez, F.J., Rincón, C., Solid State Commun. 84 (1992) 551.Google Scholar
[14] Ishii, M. Shibata, K. Nozaki, H. J. Solid State Chem. 105 (1993) 504.Google Scholar
[15] Rincón, C., Wasim, S.M. Marín, G., Delgado, J.M. Huntzinger, J.R. Zwick, A. Galibert, J. Appl. Phys. Lett. 73 (1998) 441.Google Scholar
[16] Xue, C. Papadimitriou, D. Esser, N. J. Phys. D: Appl. Phys. 37 (2004) 2267.Google Scholar
[17] Witte, W. Kniese, R. Powalla, M. Thin Solid Films 517 (2008) 867.Google Scholar
[18] Álvarez-García, J., Rudigier, E. Rega, N. Barcones, B. Scheer, R. Pérez-Rodríguez, A., Romano-Rodríguez, A., Morante, J.R. Thin Solid Films 431-432 (2003) 122.Google Scholar
[19] Wei, S.H. Zhang, S.B. Zunger, A. Phys. Rev. B 59 (1999) R2478.Google Scholar