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Insertion effect of the 3-nm-thick Co(Pt) layer on AlN preferred orientation and residual stress in the c-axis textured AlN film

Published online by Cambridge University Press:  19 March 2013

Takashi Harumoto
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1-S8-6 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba, 278-8510, Japan
Shinji Muraishi
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1-S8-6 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Ji Shi
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1-S8-6 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Yoshio Nakamura
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1-S8-6 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Takashi Ishiguro
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba, 278-8510, Japan
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Abstract

The effect of the continuously inserted 3-nm-thick Co(Pt) layer on the preferred orientation of AlN film is investigated, and highly c-axis textured AlN film has been obtained. According to high resolution transmission electron microscope observations, the preferred orientation of sputter-deposited AlN film is improved from polycrystalline to (001) texture at the interface between AlN and Co(Pt)(111). The texture of AlN films are also examined using an x-ray diffractometer equipped with a two dimensional positive sensitive detector. The x-ray rocking curve full width at half maximum of 002AlN of (001) textured AlN with the Co(Pt) layer is 2.7°, and the residual stress of such specimen is 1.6 GPa in tensile stress.

Type
Articles
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

Loebl, H. P., Metzmacher, C., Milson, R. F., Lok, P., Straten, F. V., and Tuinhout, A., J. Electroceram. 12, 109 (2004).10.1023/B:JECR.0000034005.21609.91CrossRefGoogle Scholar
Kamohara, T., Akiyama, M., Ueno, N., Sakamoto, M., Kano, K., Teshigahara, A., Kawahara, N., and Kuwano, N., Appl. Phys. Lett. 89, 071919 (2006).10.1063/1.2337558CrossRefGoogle Scholar
Hodumi, Y., Shi, J., and Nakamura, Y., Appl. Phys. Lett. 90, 212506 (2007).10.1063/1.2742793CrossRefGoogle Scholar
Yu, Y. X., Hodumi, Y., Shi, J., and Nakamura, Y., Vacuum 84, 158 (2010).10.1016/j.vacuum.2009.04.034CrossRefGoogle Scholar
Harumoto, T., Muraishi, S., Shi, J., and Nakamura, Y., Mater. Technol. 26, 32 (2011).10.1179/175355511X12941605982262CrossRefGoogle Scholar
Harumoto, T., Muraishi, S., Shi, J., and Nakamura, Y., J. Vac. Sci. Technol. A (2012) (submitted).Google Scholar
Kusaka, K., Taniguchi, D., Hanabusa, T., and Tominaga, K., Vacuum 66, 441 (2002).10.1016/S0042-207X(02)00168-9CrossRefGoogle Scholar
Dubois, M. A., and Muralt, P., J. Appl. Phys. 89, 6389 (2001).10.1063/1.1359162CrossRefGoogle Scholar