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Interdiffused SbN-based Quantum Well on GaAs for 1300-1550 nm Diode Lasers

Published online by Cambridge University Press:  01 February 2011

Ronald A. Arif  and
Nelson Tansu
Ronald A. Arif
Affiliation:
raa4@lehigh.edu, Lehigh University, Department of Electrical and Computer Engineering, 7 Asa Drive, Sinclair Lab Rm 218, Bethlehem, Pennsylvania, 18015, United States, (610) 758-4326, (610) 758-2605
Nelson Tansu
Affiliation:
tansu@lehigh.edu, Lehigh University, Department of Electrical and Computer Engineering, United States
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Abstract

A new method to realize InGaAsSbN quantum well (QW) structures on GaAs substrate is presented. This approach combines the established growth technique of InGaAsN and InGaAsSb QWs by metal organic chemical vapor deposition (MOCVD), with a post-growth thermal interdiffusion to achieve high quality interdiffused InGaAsSbN QW for diode lasers emitting at 1300-1550-nm. In addition to presenting the optimized interdiffused SbN-based QW design at 1550-nm, strain-compensated interdiffused InGaAsSb-GaAsN QW structure is also presented. Preliminary experimental findings of N- and Sb-diffusivities in GaAs matrix show good agreement with theory, indicating the feasibility of realizing interdiffused InGaAsSbN QW.

Keywords

optoelectronicIII-Vlaser
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE11-09
Copyright
Copyright © Materials Research Society 2006

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