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Interfacial Resistive Properties of Multi-layered Silicon-based Ohmic Contacts

Published online by Cambridge University Press:  01 February 2011

Madhu Bhaskaran ,
Sharath Sriram  and
Anthony Stephen Holland
Madhu Bhaskaran
Affiliation:
madhu.bhaskaran@gmail.com, RMIT University, Microelectronics and Materials Technology Centre and Platform Technologies Research Institute, Melbourne, Victoria, Australia
Sharath Sriram
Affiliation:
sharath.sriram@gmail.com, RMIT University, Microelectronics and Materials Technology Centre and Platform Technologies Research Institute, GPO Box 2476, Melbourne, Victoria, 3001, Australia
Anthony Stephen Holland
Affiliation:
anthony.holland@rmit.edu.au, RMIT University, Microelectronics and Materials Technology Centre and Platform Technologies Research Institute, Melbourne, Victoria, Australia
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Abstract

This article reports on the characterization of two- and three-layer ohmic contacts comprising of titanium disilicide and nickel silicide. Cross Kelvin resistor test structures were used to extract the specific contact resistivity (SCR) values for the different ohmic contacts fabricated. The SCR of aluminum to titanium silicide (Al-TiSi2) ohmic contacts was evaluated to be as low as 6.0 x 10-10 Ωcm2. Three-layer ohmic contacts were created using aluminum and nickel silicide thin films and doped silicon. SCR values as low as 5.0 x 10-9 Ωcm2 to antimony-doped silicon and 3.5 x 10-9 Ωcm2 to boron-doped silicon were evaluated.

Keywords

microelectronicselectrical propertiesthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-F01-07
Copyright
Copyright © Materials Research Society 2010

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References

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