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Ion Bombardment and Disorder in Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

L. S. Sidhu ,
F. Gaspari  and
S. Zukotynski
L. S. Sidhu
Affiliation:
ECE Department, University of Toronto, Toronto, Ontario, Canada M5S 3G4, sidhu @ ecf.toronto.edu
F. Gaspari
Affiliation:
ECE Department, University of Toronto, Toronto, Ontario, Canada M5S 3G4, sidhu @ ecf.toronto.edu
S. Zukotynski
Affiliation:
ECE Department, University of Toronto, Toronto, Ontario, Canada M5S 3G4, sidhu @ ecf.toronto.edu
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Abstract

The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 597
Copyright
Copyright © Materials Research Society 1997

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References

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