Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-01-15T07:15:20.162Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion-Beam Reactive Sputter Deposition of MgO Thin Films on Silicon and Sapphire Substrates

Published online by Cambridge University Press:  25 February 2011

Alice F. Chow ,
Shang Hsieh Rou ,
Daniel J. Lichtenwalner ,
Orlando Auciello  and
Angus I. Kingon
Alice F. Chow
Affiliation:
North Carolina State University, Raleigh, NC
Shang Hsieh Rou
Affiliation:
North Carolina State University, Raleigh, NC
Daniel J. Lichtenwalner
Affiliation:
North Carolina State University, Raleigh, NC
Orlando Auciello
Affiliation:
North Carolina State University, Raleigh, NC
Angus I. Kingon
Affiliation:
North Carolina State University, Raleigh, NC
Get access

Abstract

MgO thin films were deposited on silicon and sapphire substrates using ion-beam reactive sputtering. Films have been analyzed using x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Highly oriented (100) MgO films have been obtained on Si (100) substrates. The in-plane orientation is predominantly [100]MgO//[100]Si, although a twist of up to ±10° between grains is observed. Epitaxial films of MgO were deposited on four different orientations of sapphire. The MgO film orientation was (111) on c-cut (0001) Al2O3 and exhibited double positioning boundaries in TEM analysis. On r-cut (1102) Al2O3, the MgO appeared to be oriented (730) with tilt and twist of ±2° between the grains. Epitaxial MgO films oriented (110) and (111) were obtained on m-cut (1010) and a-cut (1120) sapphire orientations, respectively. In-plane directions were extracted from TEM analysis on all the samples. Atomic force microscopy revealed fairly smooth MgO films on sapphire, varying from 0.35 nm average roughness for the MgO film on the m-cut substrate to 0.80 nm on the r-cut substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 253
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wu, X.D., Muenchausen, R.E., Nogar, N.S., Pique, A., Edwards, R., Wilkens, B., Ravi, T.S., Hwang, D.M., and Chen, C.Y., Appl. Phys. Lett 58, 304 1991).CrossRefGoogle Scholar
2. Inoue, T., Ohsuna, T., Luo, L., Wu, X.D., Maggiore, C.J., Yamamoto, Y., Sakurai, Y., and Chang, J.H., Appl. Phys. Lett. 59, 3604 (1991).Google Scholar
3. Lichtenwalner, D.J., Auciello, O., Woolcott, R.R. Jr, Soble, C.N. II, to be published in J. Vac. Sci. Tech. A 10, July/Aug. (1992).Google Scholar
4. Higashi, G.S., Becker, R.S., Chabal, Y.J., and Becker, A.J., Appl. Phys. Lett. 58, 15 (1991).Google Scholar
5. Berezin, A.B., Yuan, C.W., Lozanne, A.L. de, Garrison, S.M., and Barton, R.W., IEEE Trans. Magnetics 27, 970 (1991).Google Scholar
6. Fenner, D.B., Biegelsen, D.K., and Bringans, R.D., J. Appl. Phys. 66, 419 (1989).CrossRefGoogle Scholar
7. Talvacchio, J., Wagner, G.R., and Pohl, H.C., Physica C 162–164, 659–60 (1989).Google Scholar