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Kelvin Probe Microscopy and Cathodoluminescence Microanalysis of the Irradiation Induced Modification of Insulating Materials.

Published online by Cambridge University Press:  11 February 2011

Marion A. Stevens-Kalceff
Marion A. Stevens-Kalceff*
Affiliation:
School of Physics and Electron Microscope Unit, University of New South Wales, Sydney, 2052, NSW, AUSTRALIA
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Abstract

A combination of Kelvin Probe Microscopy (KPM) and Cathodoluminescence (CL) microanalysis has been used to characterize ultra pure silicon dioxide (SiO2) exposed to electron irradiation in a Scanning Electron Microscope. Charged beam irradiation of poorly conducting materials results in the trapping of charge at pre-existing or irradiation induced defects thereby inducing a localized electric field within the irradiated micro-volume of specimen. The residual surface potentials associated with the localized electric field have been mapped using KPM. Evidence of electro-diffusion and defect micro-segregation in charged beam irradiated SiO2 is observed. The associated mobile defect species are identified using CL microanalysis techniques. The high correlation between KPM and CL images confirms the significant influence of localized potentials on the microstructure of technologically important SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 738: Symposium G – Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures , 2002 , G5.4
Copyright
Copyright © Materials Research Society 2003

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References

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