Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-13T02:47:49.882Z Has data issue: false hasContentIssue false
  • English
  • Français

Large Area Electron Beam Enhanced Reactive Etching of SiO2

Published online by Cambridge University Press:  25 February 2011

P. Kirk Boyer ,
Tim Verhey  and
Jorge J. Rocca
P. Kirk Boyer
Affiliation:
Tektronix, Inc., P.O. Box 500, Beaverton, OR 97077
Tim Verhey
Affiliation:
Colorado State University, Dept. of Electrical Engineering, Fort Collins, CO 80523
Jorge J. Rocca
Affiliation:
Colorado State University, Dept. of Electrical Engineering, Fort Collins, CO 80523
Get access

Abstract

A large area (2.8 cm2) electron beam source has been developed, characterized, and applied to anisotropic etching of SiO2 masked with photoresist. This beam operates at high pressures (up to 100 mTorr), in reactive gases, and at more than 10 mA/cm2. Beam current can be controlled in several ways independently from beam energy. The 100 – 900 eV low energy beam propagates with collimation through several cm of reactive gas, and is believed to minimize space charge defocusing by collisionally ionizing the working gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 223
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Coburn, J.W. and Winters, H.F., J. Appl. Phys. 50, 3189 (1979).Google Scholar
2) Loudiana, M.A. and Dickenson, T., Presented at Microphys. Surf. Beams, Adsorbates; Santa Fe, N.M. Feb. 1984.Google Scholar
3) Kaufman, H.R. and Robinson, R.S., J. Vac. Sci. Technol. A 3 (4), 1774 (1985).Google Scholar
4) Kunz, R.R. and Mayer, T.M., J. Vac. Sci. Technol. B 5 (1), 427 (1987).Google Scholar
5) Kireev, V.Y. et. al., Sov. Tech. Phys. Lett. 7 (9), 467 (1981).Google Scholar
6) Verhey, T.R., Rocca, J.J., and Boyer, P.K., (to be published).Google Scholar
7) Stephan, K., Deutsch, H., and Mark, T.D., J. Chem. Phys. 83, 5712 (1985).Google Scholar
8) Stephan, K., Deutsch, H., and Mark, T.D., J. Chem. Phys. 73, 3763 (1980).Google Scholar