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Lattice Temperature of GaAs and Si During Nanosecond Laser Annealing

Published online by Cambridge University Press:  22 February 2011

A. Pospieszczyk ,
M. Abdel Harith  and
B. Stritzker
A. Pospieszczyk
Affiliation:
Association Euratom-KFA, Institut für Plasmaphysik, Kernforschungsanlage Jülich, D-5170 Jülich, FRG,
M. Abdel Harith
Affiliation:
Association Euratom-KFA, Institut für Plasmaphysik, Kernforschungsanlage Jülich, D-5170 Jülich, FRG, Department of Physics, Cairo University, Cairo, Egypt,
B. Stritzker
Affiliation:
Institut für Festkörperforschung, Kernforschungsanlage Jülich, D-5170 Jülich, FRG
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Abstract

Single crystals of GaAs (100) and Si (110) were laser annealed with a 20 ns ruby laser pulse. Both the velocity distribution and the density variation of evaporated Ga or As and Si atoms were determined by a time-of-flight measurement. In addition time-resolved measurements were made of the reflectivity of the surface during the laser annealing. The data consistently show that the molten phase occurs at energy densities of ≳ 0.35 J cm–2 for GaAs and ≳O.8 J cm for Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 267
Copyright
Copyright © Materials Research Society 1984

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References

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