Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-29T12:20:00.039Z Has data issue: false hasContentIssue false
  • English
  • Français

Localized Nature of Photoluminescence from Anodically Oxidized Porous Silicon

Published online by Cambridge University Press:  28 February 2011

T. Ito ,
K. Furuta ,
T. Yoneda ,
O. Arakaki ,
A. Hatta  and
A. Hiraki
T. Ito
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
K. Furuta
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
T. Yoneda
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
O. Arakaki
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
A. Hatta
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
A. Hiraki
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
Get access

Abstract

Photoluminescence (PL) properties from anodically oxidized porous silicon (PS) have been investigated. Large temperature coefficients (-0.5 meV/K) of PL peak energy are observed for relatively strongly oxidized PS specimens which show saturation of PL peak blue shift upon further anodic oxidation. Time-resolved PL data show that the PL decay is characteristic of thermal activation process with an energy of 9-27 meV at low temperatures between 80 and 180 K. Those results can be explained using a luminescence model which assumes several PL centers in the energy gap and considers thermally activated and tunneling processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 477
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 see for example Mater. Res. Soc. Symp. Proc. 253 (1992), 283 (1993), 298 (1993).Google Scholar
2 Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
3 Koch, F., Mater. Res. Soc. Symp. Proc. 298, 319 (1993) and references therein.Google Scholar
4 Ito, T. and Hiraki, A., J. Lumin. 57, 331 (1993).Google Scholar
5 Ito, T., Ohta, T. and Hiraki, A., Jpn. J. Appl. Phys. 31, L1 (1992).Google Scholar
6 Petrova-Koch, V., Muschik, M., Kuk, A., Meyer, B.K. and Koch, F., Appl. Phys. Lett. 61, 943 (1992).Google Scholar
7 Ito, T., Ohta, T., Motoi, K., Arakaki, O. and Hiraki, A., Mater. Res. Soc. Symp. Proc. 283, 263 (1993).Google Scholar
8 Ito, T., Motoi, K., Arakaki, O., Hatta, A. and Hiraki, A., Jpn. J. Appl. Phys. 33, L941 (1994).Google Scholar
9 Vial, J.C., Bsiesy, A., Gaspard, F., Herino, R., Ligeon, M., Muller, F. and Romestain, R., Phys. Rev. B45, 14171 (1992).Google Scholar
10 Levenberg, K., Quart. Appl. Mathema. 2, 164(1944).Google Scholar