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Long Term Retention Characteristic of Small Inverted Dots Formed on Congruent Single-Crystal LiTaO3

Published online by Cambridge University Press:  26 February 2011

Yasuo Cho  and
Nozomi Odagawa
Yasuo Cho
Affiliation:
cho@riec.tohoku.ac.jp, Tohoku University, R.I.E.C., 2-1-1, Katahira Aoba-ku, Sendai, N/A, Japan, +81-22-217-5529, +81-22-217-5529
Nozomi Odagawa
Affiliation:
nozomiod@riec.tohoku.ac.jp, Tohoku University, Sendai, 980-8577, Japan
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Abstract

To investigate the long-term retention characteristics of a ferroelectric-data-storage system, 80-nm-thick congruent LiTaO3 plates with inverted-domain dot arrays composed of 100-nm-φpdots were baked at 220, 250, 280 and 300°C. After heat treatment over a range of different time intervals, the dots shrank. From the change in the dot radius data, the activation energy (Ea) and frequency factor (α), parameters of the Arrhenius equation, were determined to be = 0.76 eV, = 2.21×105. From these parameter we can predict competitive retention characteristics compared with general memory devices. The phenomenon of dot shrinking can be explained from the energy transition of the system based on wall energy.

Keywords

ferroelectricmemorydielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 966: Symposium T – Ferroelectrics and Multiferroics , 2006 , 0966-T11-21
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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