Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2025-01-01T03:07:21.892Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Crystallization of SrBi2Ta2O9 Film by Excimer Laser Irradiation

Published online by Cambridge University Press:  10 February 2011

K.S. Seol ,
H. Hiramatsu ,
Y. Ohki ,
D.-S. Shin ,
I.-H. Choi  and
Y-T. Kim
K.S. Seol
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama 51-0198, Japan, seol@postman.riken.go.jp Department of MS&E, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul, 16-701, Korea
H. Hiramatsu
Affiliation:
Department of EE&CE, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan
Y. Ohki
Affiliation:
Department of EE&CE, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan
D.-S. Shin
Affiliation:
Department of MS&E, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul, 16-701, Korea
I.-H. Choi
Affiliation:
Department of MS&E, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul, 16-701, Korea
Y-T. Kim
Affiliation:
KIST, P.O. Box 11, Cheongryang, Seoul, 10-650, Korea
Get access

Abstract

Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi2Ta2O9 films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 293
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Araujo, C. A Paz de, Cuchiaro, J. D., McMillan, L. D., Scott, M. C., and Scott, J. F., Nature 74, 627 (1995).Google Scholar
[2] Mihara, T., Yoshimori, H., Watanabe, H., and Araujo, C. A. Paz de, Jpn. J. Appl. Phys. 34, 5233 (1995).Google Scholar
[3] Tanabe, N., Matsuki, T., Saitoh, S., Takeuchi, T., Kobayashi, S., Nakajima, T., Maejima, Y., Amanuma, K., Hase, T., Miyasaka, Y., and Kunio, T., Dig. Tech. Papers, 1995 Symp. VLSI Tech. (Japan Conf. Center, Tokyo, 1995) p. 12.Google Scholar
[4] Ito, Y., Ushikubo, M., Yokoyama, S., Matsunaga, H., Atsuki, T., Yonezawa, T., and Ogi, K., Jpn. J. Appl. Phys. 5, 4925 (1996).Google Scholar
[5] Boyle, T. J., Buchheit, C. D., Rodriguez, M. A., Al-Shareef, H. N., Scott, B., and Ziller, J. W., J. Mater. Res. 11, 2274 (1996).Google Scholar
[6] Osaka, T., Sakakibara, A., Seki, T., Ono, S., Koiwa, I., and Hashimoto, A., Jpn. J. Appl. Phys. 7, 597 (1998).Google Scholar
[7] Sameshima, T., Hara, M., and Usui, S., Jpn. J. Appl. Phys. 28, 1789 (1989).Google Scholar
[8] Lu, X. M., Zhu, J. S., Hu, W. S., Liu, Z. G., and Wang, Y. N., Appl. Phys. Lett. 66, 24 (1995).Google Scholar