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Low Temperature MOCVD of Thin Film PZT

Published online by Cambridge University Press:  10 February 2011

Ing-Shin Chen  and
Jeffery F. Roeder
Ing-Shin Chen
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
Jeffery F. Roeder
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
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Abstract

Incorporation of ferroelectric thin films into integrated microelectronics requires deposition temperatures compatible with back-end processing. Pb(Zr,Ti)O3 (PZT) thin films have been deposited at low temperatures by a thermal chemical vapor deposition process using flash-vaporized metalorganic precursors. Deposition temperatures, A-site to B-site ratios in the precursor solution, and bottom electrodes have been surveyed. Stoichiometric perovskite films with (Zr/Ti) ratios ranging from 20/80 to 50/50 were obtained. Films deposited at temperatures below 500°C possess very fine grain structures. Capacitor structures were fabricated by depositing top electrodes using electron-beam evaporation, followed in some cases by a post-electrode anneal at 650°C. Remanent polarizations greater than 20 μC/cm2 were observed on films deposited on Pt at temperatures as low as 475°C. Perovskite films were obtained on Ir electrodes at temperatures as low as 450°C, with remanent polarization greater than 10μC/cm2 in the as-deposited condition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 375
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Peng, C.H. and Desu, S.B., Appl. Phys. Lett. 61, p. 16 (1992).Google Scholar
2. Bai, G.-R., Wang, A., Tsu, I.-F., Foster, C.M., and Auciello, O., Integ. Ferroelectrics 21, 291 (1998).Google Scholar
3. Keijser, M. de, Dormans, G.J.M., Veldhoven, P.J. van, and Larsen, P.K., Integ. Ferroelectrics 3, p. 131 (1993).Google Scholar
4. Roeder, J.F., Vaartstra, B.A., Buskirk, P.C. van, and Beratan, H.R., Mater. Res. Soc. Symp. Proc. 415, p. 123 (1996).Google Scholar
5. Buskirk, P.C. van, Roeder, J.F., Baum, T.H., Bilodeau, S.M., Russel, M.W., Johnston, S.T., Carl, R.J., Desrochers, D.J., Hendrix, B.C., and Hintermaier, F., Integ. Ferroelectrics 21, 273 (1998).Google Scholar
6. Roeder, J.F., Chen, I.-S., Buskirk, P.C. van, Beratan, H.R., and Hanson, C.M., presented at 11th ISAF, 1998; to be published in proceedings.Google Scholar
7. Hase, T., Sakuma, T., Amanuma, K., Mori, T., Ochi, A., and Miyasaka, Y., Integ. Ferroelectrics 8, p. 89 (1995).Google Scholar