Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-29T10:58:15.950Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-k Dielectric Obtained by Noble Gas Implantation in Silicon Oxide

Published online by Cambridge University Press:  01 February 2011

Hanan Assaf ,
E. Ntsoenzok ,
M-O. Ruault  and
S. Ashok
Hanan Assaf
Affiliation:
assaf@cnrs-orleans.fr, CERI, CNRS, 3a, rue de la férollerie, Orleans, 45071, France
E. Ntsoenzok
Affiliation:
esidor@cnrs-orleans.fr, University of Orleans, LESI, 21 rue de loigny la bataille, Chartres, 28000, France
M-O. Ruault
Affiliation:
ruault@csnsm.in2p3.fr, CNRS-IN2P3, CSNSM, Batiment 108-F, Orsay, N/A, 91405, France
S. Ashok
Affiliation:
sashok@psu.edu, the Pennsylvania State University, Department of Engineering Science, 212 Earth and Engineering Science Building, University Park, Pennsylvania, PA, 16802, United States
Get access

Abstract

Thermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5x1016Xe/cm2. As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≤400°C results in the disappearance of bubbles from SiO2 layer for the dose of 1x1016Xe/cm2. But for the higher doses of 3.5 and 5x1016Xe/cm2, the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO2 sample from 4 (reference sample) to 1.5.

Keywords

oxideion-implantationdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F03-04
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Xu, J., Moxom, J., Yang, S., and Suzuki, R., Ohdaira, T., Appl. Surf. Sci. 194, 189 (2002).Google Scholar
2 International Technology Roadmap for Semiconductors 2003, Semiconductor Industry Association, www.itrs.netGoogle Scholar
3 Chu, P. K. and Chan, C., Surf. and Coatings Technol. 136, 151, (2001).Google Scholar
4 Jain, A., Rogojevic, S., Ponoth, S., Agarwal, N., Matthew, I., Gill, W. N., Persans, P., Tomozawa, M., Plawsky, J.L., Simonyi, E., Thin solid Film 398–399, 513, (2001)Google Scholar
5 Homma, T., Yamaguchi, R., Murao, Y., J. Electrochem Soc 140, 3599, (1993)Google Scholar
6 Swart, J.W., Diniz, J.A., Doi, I., and Moraes, M.A.B. de, Nucl. Instr. and Meth. B 166–167, 171, (2000).Google Scholar
7 Assaf, H., Ntsoenzok, E., Ruault, M.-O., Kaitasov, O., Solid State Phenomena 108/109, 291, (2005).Google Scholar
8 Ziegler, J. F., Biersack, J., and Littmark, U., The Stopping and Range of Ions in Solids Pergamon, NewYork, 1996; see http://www.srim.org.Google Scholar
9 Knights, A.P., Allard, L.B., Brebner, J.L., Simpson, P.J., Nucl. Instr. and Meth. B 127–128, 86, (1997).Google Scholar