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Low-Temperature Properties of Compensated Ge Films Used for Cryogenic Thermometers

Published online by Cambridge University Press:  01 February 2011

V. F. Mitin ,
V. V. Kholevchuk ,
V. K. Dugaev  and
M. Vieira
V. F. Mitin
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauki 45, 03028 Kiev, Ukraine
V. V. Kholevchuk
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauki 45, 03028 Kiev, Ukraine
V. K. Dugaev
Affiliation:
Institute for Problems of Materials Science, Vilde 5, 58001 Chernovtsy, Ukraine Department of Electronics and Communications, Instituto Superior de Engenharia de Lisboa, Rua Conselheiro Emidio Navarro, 1949-014, Lisbon, Portugal
M. Vieira
Affiliation:
Department of Electronics and Communications, Instituto Superior de Engenharia de Lisboa, Rua Conselheiro Emidio Navarro, 1949-014, Lisbon, Portugal
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Abstract

Low temperature microsensors are designed for cryogenic applications. As a material for the sensors we use heavily doped compensated Ge films deposited on the semi-insulating GaAs substrates. We present the results of experimental and theoretical study of the low temperature resistance as a function of temperature and magnetic field for some models of temperature sensors. The computer simulations show a good agreement with experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.43
Copyright
Copyright © Materials Research Society 2002

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