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Magnetoresistance Measurements on Boron-Doped and Undoped Ni3Al Thin Films

Published online by Cambridge University Press:  17 March 2011

Edward C. Patterson Jr  and
L. L. Henry
Edward C. Patterson Jr
Affiliation:
Department of Physics, Southern University and A. & M. College, Baton Rouge, LA 70813, U.S.A
L. L. Henry*
Affiliation:
Department of Physics, Southern University and A. & M. College, Baton Rouge, LA 70813, U.S.A
*
*Corresponding author
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Abstract

Magnetoresistance measurements were performed in magnetic fields up to 5 T, to examine the effects of boron doping on the electron transport properties of Ni3Al thin (500 Å, nominal, thickness) films. Both a doped (~200 ppm B) and undoped film were investigated. Four-probe magnetoresistance (magnetic field = 50 G and 5 T) measurements indicate that both samples undergo a phase transition in the 200 K – 300 K temperature range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P3.24
Copyright
Copyright © Materials Research Society 2001

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