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Material Reliability and Integration Issues of Polyimide and Benzocyclobutene Interlayer Dielectric Materials

Published online by Cambridge University Press:  01 February 2011

Parshuram B. Zantye ,
Ashok Kumar ,
R. Gopalkrishnan  and
S. Balakumar
Parshuram B. Zantye
Affiliation:
Department of Mechanical Engineering, Nanomaterials & Nanomanufacturing Research Center, University of South Florida, Tampa, Florida-33620
Ashok Kumar
Affiliation:
Department of Mechanical Engineering, Nanomaterials & Nanomanufacturing Research Center, University of South Florida, Tampa, Florida-33620
R. Gopalkrishnan
Affiliation:
Institute of Microelectronics, Science Park II, Singapore, 117685
S. Balakumar
Affiliation:
Institute of Microelectronics, Science Park II, Singapore, 117685
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Abstract

The constant push for decreasing the Resistance-Capacitance (RC) delay has led to the implementation of Multilevel Metallization (MLM) scheme for interconnect wiring, Cu as the wiring material and low ê materials as Interlayer Dielectric (ILD). Polymeric materials are being explored to replace SiO2 based ILD materials in the next generation ICs. Several reliability and integration challenges arise during integration of the candidate polymeric ILD when they are subjected to planarization by Chemical Mechanical Polishing (CMP). In this research, we have performed a comparative study of certain candidate low ê materials: 1) undoped SiO2 (standard), 2) Polyimide and 3) Benzocyclobutene (BCB). We have studied the impact of reduction in dielectric constant on the mechanical and tribological properties, and the CMP performance of these ILD materials. The adverse effect of shear and mechanical abrasion due to decreased mechanical properties of the low ê materials induced numerous defects during CMP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B8.26
Copyright
Copyright © Materials Research Society 2005

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