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Materials Study of the Competing Group-V Element Incorporation Process in Dilute-Nitride Films

Published online by Cambridge University Press:  31 January 2011

Wendy L. Sarney  and
Stefan P. Svensson
Wendy L. Sarney
Affiliation:
wendy.l.sarney@us.army.mil, U.S. Army Research Laboratory, Sensors & Electron Devices Directorate, Adelphi, Maryland, United States
Stefan P. Svensson
Affiliation:
stefan.svensson@us.army.mil, U.S. Army Research Laboratory, Sensors & Electron Devices Directorate, Adelphi, Maryland, United States
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Abstract

The incorporation of small amounts of N into III-V antimonide-containing semiconductor alloys allows a drastic expansion of available wavelengths for infrared (IR) detector applications. Quaternary films containing three group-V elements can be lattice matched to the most prevalent substrates for IR applications, such as InAs, GaAs, and GaSb. It is not trivial to incorporate N while maintaining the high crystalline quality required for IR devices. Current materials characterization studies of dilute-nitride films consisting of more than two group-V elements has yielded conflicting information related to their competing behavior and the extent of N incorporation. Due to challenges related to light-element microanalysis for many characterization techniques, and the small concentrations of N involved, it is difficult to quantify the amount of N incorporated into dilute-nitride films. In this study, we use transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), and x-ray diffraction (XRD) to study the incorporation behaviors of the competing group-V elements in InAsSbN films.

Keywords

III-Vtransmission electron microscopy (TEM)N
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I05-24
Copyright
Copyright © Materials Research Society 2010

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