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Mathematical Model for the Simulation of Crystallization of CdTe in a vertical Bridgman Furnace.

Published online by Cambridge University Press:  21 February 2011

Ch. Steer ,
M. Hage-Ali  and
P. Siffert
Ch. Steer
Affiliation:
CNRS, Lab. Phase, F-67037 Strasbourg CEDEX, France
M. Hage-Ali
Affiliation:
CNRS, Lab. Phase, F-67037 Strasbourg CEDEX, France
P. Siffert
Affiliation:
CNRS, Lab. Phase, F-67037 Strasbourg CEDEX, France
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Abstract

Temperature measurements in a crystal growth ampoule of CdTe (Cadmium Telluride) are very difficult. Mathematical simulation is a very powerful tool to predict the behavior and temperature distribution during crystal growth. We applied this technique to the bulk growth of large single crystals of CdTe. The simulation revealed that for CdTe, it is possible to create a convex interface shape during growth, necessary for single crystal growth. The controlling parameter is the temperature profile along the ampoule. The temperature gradient is rather meaningless, as we can show with our simulations.

We will present some crystals grown under good and bad thermal conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 237
Copyright
Copyright © Materials Research Society 1993

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References

References:

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