Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2025-01-01T05:44:38.730Z Has data issue: false hasContentIssue false
  • English
  • Français

MBE Growth of Ferroelectric YMnO3 Thin Films on Si(111) Using Y2O3 Buffer Layers

Published online by Cambridge University Press:  10 February 2011

Shogo Imada ,
Shigeto Shouriki ,
Eisuke Tokumitsu  and
Hiroshi Ishiwara
Shogo Imada
Affiliation:
Frontier Collaborative Research Center, Midori-ku, Yokohama 226-8503, Japan
Shigeto Shouriki
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Eisuke Tokumitsu
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Hiroshi Ishiwara
Affiliation:
Frontier Collaborative Research Center, Midori-ku, Yokohama 226-8503, Japan Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Get access

Abstract

A ferroelectric YMnO3 thin films are grown on Si (111) substrates using Y2O3 buffer layers by molecular beam epitaxy (MBE). In-situ reflection high-energy electron diffraction (RHEED) analyses show that both Y2O3 and YMnO3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best FWHM (full width at half maximum) values for Y2O3 and YMnO3 films are 0.40° and 0.8°, respectively. C-V characteristics of Al/YMnO3/Y2O3/Si structures indicate the ferroelectric properties of YMnO3 films with a memory window of 0.7V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 585
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Scott, J. F. and Araujo, C. A.: Science 246 1400 (1989).Google Scholar
[2] Ishiwara, H.: Jpn. J. Appl. Phys. 32 442 (1993).Google Scholar
[3] Park, B. E., Imada, S., Tokumitsu, E. and Ishiwara, H.: J. Korean Phys. Soc. 32 s1390 (1998).Google Scholar
[4] Park, B. E., Shouriki, S., Tokumitsu, E. and Ishiwara, H.: Jpn. J. Appl. Phys. 37 5145 (1993).Google Scholar
[5] Fukumoto, H., Imura, T. and Osaka, Y.: Appl. Phys. Lett. 55 360 (1989).Google Scholar
[6] Gurvitch, M., Mancanda, L. and Gibson, J. M.: Appl. Phys. Lett. 51 919 (1987).Google Scholar
[7] Yoshimura, T., Fujimura, N., Aoki, N., Hokayama, K., Tsukui, S., Kawabata, K. and Ito, T.: Jpn. J. Appl. Phys. 36 5921 (1997).Google Scholar
[8] Yoshimura, T., Fujimura, N., Aoki, N., Hokayama, K., Tsukui, S., Kawabata, K. and Ito, T.: J. Korean Phys. Soc. 32 s1632 (1998).Google Scholar
[9] Yakel, H.L. and Koehler, W.C., Bertaut, E. F. and Forrat, E. F.: Acta Cryst. 16 957 (1963).Google Scholar
[10] Fujimura, N., Ishida, T., Yoshimura, T. and Ito, T.: Appl. Phys. Lett. 69 1011 (1996).Google Scholar