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The Mechanism of Haze and Defectivity Reduction in a New Generation of High Performance Silicon Final Polishing Slurries

Published online by Cambridge University Press:  01 February 2011

Michael L White ,
Richard Romine ,
Lamon Jones  and
William Ackerman
Michael L White
Affiliation:
Michael_White@cabotcmp.com, Cabot Microelectronics, Aurora, Illinois, United States
Richard Romine
Affiliation:
richard_romine@cabotcmp.com, Cabot Microelectronics, Aurora, Illinois, United States
Lamon Jones
Affiliation:
lamon_jones@cabotcmp.com, Cabot Microelectronics, Aurora, Illinois, United States
William Ackerman
Affiliation:
William_Ackerman@cabotcmp.com, Cabot Microelectronics, Aurora, Illinois, United States
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Abstract

The mechanism of haze reduction during silicon polishing using a new generation of additives has been explored. These additives are thought to decrease haze by adsorbing to the wafer surface and increasing the activation energy of the reaction between the silanolates on the silica particle surface with the surface silicon. This leads to greater selectivity between the peaks and valleys resulting in a net decrease in surface roughness.

Keywords

CMPSidefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-E03-03
Copyright
Copyright © Materials Research Society 2010

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References

1 Seidel, H. et al. J. Electrochem. Soc. 137, 3612 (1990)Google Scholar
2 Pietsch, G. J. Appl. Phys. 78, 774–777 (1991).Google Scholar
3 Estraganat, E. et al. J. Electronic Mat. 33 (4), 334–339 (2004).Google Scholar
4 Forsburg, M. Microelectr. Eng. 77; 319–326 (2005).Google Scholar
5 Tredinnick, et al. US Patent 3. 715, 542 (1973)Google Scholar
6 Park, J. et al. J. Kor, Phys. Soc. V48 (4), 507 (2006)Google Scholar
7 Park, J. et al. J. Electroceram. 17, 835 (2006)Google Scholar
8 Park, J. et al. Jap. Jour. Appl. Phys. 49, 012016 (2010)Google Scholar
9 White, M. L. ICPT 2007 Proceedings (10/25/2007)Google Scholar
10 Ogawa, H. Jpn. J. of Appl. Phys. V42, 581 (2003)Google Scholar
11 Teichert, C. et al. , Appl. Phys. Lett. 66 (18) p 2346 (1995)Google Scholar
12 Liu, et al. Microelect. Eng. 66, 438 (2003)Google Scholar
13 Takahashi, et al. Int. Conf, on Plaar Tech/CMP No 19, 335 (2009)Google Scholar