Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-14T17:39:19.805Z Has data issue: false hasContentIssue false
  • English
  • Français

Memory retention of doped SbTe phase change line cells measured isothermally and isochronally

Published online by Cambridge University Press:  01 February 2011

Jasper L.M. Oosthoek ,
Bart J. Kooi ,
Karen Attenborough ,
Fred A.M. Hurkx  and
Dirk J. Gravesteijn
Jasper L.M. Oosthoek
Affiliation:
j.l.m.oosthoek@rug.nl
Bart J. Kooi
Affiliation:
b.j.kooi@rug.nl, Materials Innovation Institute M2i and Zernike Institute for Advanced Materials, University of Groningen, Groningen, Netherlands
Karen Attenborough
Affiliation:
karen.attenborough@nxp.com, NXP-TSMC Research Center, Leuven, Belgium
Fred A.M. Hurkx
Affiliation:
fred.hurkx@nxp.com, NXP-TSMC Research Center, Leuven, Belgium
Dirk J. Gravesteijn
Affiliation:
dirk.gravesteijn@nxp.com, NXP-TSMC Research Center, Leuven, Belgium
Get access

Abstract

Doped SbTe phase change (PRAM) line cells produced by e-beam lithography were cycled for at least 100 million times. The memory retention of the PRAM cell was measured both isothermally and isochronally which showed excellent agreement. An activation energy for growth of 1.7 eV was found (after 100 million cycles) for both measurements. Similar isothermal and isochronal measurements were performed on PRAM cells produced by optical lithography which yielded activation energies of 3.0 eV and 3.3 eV, respectively. Our results show that the same phase-change material can show large differences in retention behavior depending on the way the cells are produced.

Keywords

phase transformationamorphouselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G14-04-H07-04
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lacaita, L., Solid-State Electron. 50, 24 (2006)10.1016/j.sse.2005.10.046Google Scholar
2 Lankhorst, M. H. R. et al. , Nat. Mater. 4, 347 (2005)10.1038/nmat1350Google Scholar
3 Hudgens, S. Johnson, B. MRS Bulletin 29, 829–832 (2004)10.1557/mrs2004.236Google Scholar
4 Porter, D.A. Easterling, K.E. Phase Transformations in Metals and Alloys, 2nd Ed. (CRC Press, 1992)10.1007/978-1-4899-3051-4Google Scholar
5 Kissinger, H.E. Anal. Chem. 29, 1702 (1957)10.1021/ac60131a045Google Scholar
6 Oosthoek, J.L.M. et al. , E/PCOS (2009) Conference proceeding (www.epcos.org org)Google Scholar
7 Jedema, F. J. et al. , Appl. Phys. Lett. 91, 203509 (2007)10.1063/1.2812568Google Scholar
8 Pirovano, A. et al. , IEEE Trans. Elect. Devices 51, NO. 5 (2004)Google Scholar
9 Castro, D.T. et al. , IEEE Int. Elect. Devices Meeting, 315–318. Washington, DC, (2007)Google Scholar
10 Oosthoek, J.L.M. et al. , Microscopy and Microanalysis. 16 (2010) (Accepted)10.1017/S1431927610000176Google Scholar
11 Oosthoek, J.L.M. et al. , (Under preparation)Google Scholar