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Metal Contacts to n- AlXGa1-xN

Published online by Cambridge University Press:  10 February 2011

A. Sampath ,
H. M. Ng ,
D. Korakakis  and
T. D. Moustakas
A. Sampath
Affiliation:
Molecular Beam Epitaxy Laboratory, Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's * St., Boston, MA 02215
H. M. Ng
Affiliation:
Molecular Beam Epitaxy Laboratory, Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's * St., Boston, MA 02215
D. Korakakis
Affiliation:
Molecular Beam Epitaxy Laboratory, Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's * St., Boston, MA 02215
T. D. Moustakas
Affiliation:
Molecular Beam Epitaxy Laboratory, Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's * St., Boston, MA 02215
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Abstract

In this paper we report on the formation of ohmic contacts to n- AlxGa1-xN alloys. The films were produced by plasma-assisted MBE and doped n- type with silicon at doping levels between 1018 to 1019 cm-3. Contacts were formed by sequential deposition of 200 Å of Ti and 2000 Å of Al and the contact resistivities were determined from TLM measurements. For low Al- content (x<. 10) the I-V characteristics are linear with contact resistivities of between 10-4 to 10-5 cm2. The contacts become progressively non-ohmic at Al concentrations greater than 10%. There results are consistent with the Schottky limit being applicable to these alloys and thus the Ti/Al contact forms Schottky barriers with higher barrier height as the conduction band of the alloy moves towards the vacuum level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1095
Copyright
Copyright © Materials Research Society 1998

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Footnotes

*

now at the University of Nottingham

References

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