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Metastable Defect Distributions in CIGS Solar Cells and Their Impact on Device Efficiency

Published online by Cambridge University Press:  01 February 2011

Malgorzata Igalson
Malgorzata Igalson*
Affiliation:
igalson@if.pw.edu.pl, Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa, 00 660, Poland, +48 22 2348214, +48 22 2348419
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Abstract

Metastabilities in the electrical characteristics of CIGS devices are commonly observed phenomena originating from persistent changes of shallow and deep levels distributions within the absorber. We examine characteristic changes induced by voltage bias and light together with their relaxation behavior and interpret them as the consequences of a negative-U type of centers predicted by theoretical calculations of Lany and Zunger. It is shown how the properties of these centers justify a model of p+ layer explaining specific features of light and dark current-voltage characteristics. The discussion showing the impact of various charge distributions on carrier transport is presented. The arguments are provided, that centers responsible for metastable effects are also to blame for majority of photovoltaic losses exhibited in various devices.

Keywords

defectsphotovoltaicdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y04-01
Copyright
Copyright © Materials Research Society 2007

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