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A MHz Modulable Si-based LED Afforded by Engineering Light-emitting Defects in Si

Published online by Cambridge University Press:  31 January 2011

Norishige Tana-ami ,
Jun Igarashi ,
Yosuke Terada ,
Yuhsuke Yasutake  and
Susumu Fukatsu
Norishige Tana-ami
Affiliation:
cc087912@mail.ecc.u-tokyo.ac.jp, University of Tokyo, Graduate School of Arts and Sciences, Tokyo, Japan
Jun Igarashi
Affiliation:
tanaami@mbe.c.u-tokyo.ac.jp, University of Tokyo, Graduate School of Arts and Sciences, Tokyo, Japan
Yosuke Terada
Affiliation:
cc076932@mail.ecc.u-tokyo.ac.jp, University of Tokyo, Graduate School of Arts and Sciences, Tokyo, Japan
Yuhsuke Yasutake
Affiliation:
cyasutak@mail.ecc.u-tokyo.ac.jp, University of Tokyo, Graduate School of Arts and Sciences, Tokyo, Japan
Susumu Fukatsu
Affiliation:
cfkatz@mail.ecc.u-tokyo.ac.jpfkatz@mbe.c.u-tokyo.ac.jp, University of Tokyo, Graduate School of Arts and Sciences, Tokyo, Japan
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Abstract

We demonstrate a Si-based light-emitting diode (LED) with MHz modulation capability containing a certain class of light-emitting defects in the active region. The emission spectra are characterized by a narrow peak centered at 900 meV (1377 nm), hereafter referred to as E-line, which is attributed to the {311} defects inherent to cubic crystals with the diamond sublattice. The luminescence intensity of the E-line was found to go through a maximum around 20K persisting above 150 K. In spite of the decay lifetimes even longer than 1μs, 31% amplitude modulation was achieved for 1-MHz rectangular pulses at 20 K while near 10-MHz bandwidth was obtained for dynamic operation with modulated pulse widths.

Keywords

Siluminescenceoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B03-03
Copyright
Copyright © Materials Research Society 2010

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References

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