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Micromirror Arrays for High Temperature Operation

Published online by Cambridge University Press:  01 February 2011

Mahmoud F. Almasri  and
Bruno A. Frazier
Mahmoud F. Almasri
Affiliation:
Georgia Institute of Technology, Atlanta, GA 30332
Bruno A. Frazier
Affiliation:
Georgia Institute of Technology, Atlanta, GA 30332
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Abstract

This paper describes the design, modeling, fabrication, and testing of electroplated metal electrostatic torsion micromirror arrays. The goal is to develop novel micromirror arrays optimized for high temperature operation for use in epitaxial growth systems such as MOCVD and MBE to define device structure and hence eliminate the need for etching and lithography. The metallic micromirror arrays were fabricated with a hexagonal shape and with diameters of 0.5 mm2 and 1mm2. The micromirror arrays were structurally composed of primarily electroplated nickel, a mechanically durable material with a high glass transition temperature and with controllable residual stress. The torsion beam was designed with a straight bar and serpentine shape in order to optimize the voltage necessary to tilt the micromirror by ± 10°. A finite element model built in Ansys has been employed to determine the micromirror geometries and performance. A voltage of 130 volts was required to rotate the mirror with a serpentine shape beams by 10°. In addition, the mirror was operated at a resonant frequency of 2.2 kHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J1.4
Copyright
Copyright © Materials Research Society 2005

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References

1 Kessel, P. F., Hornbeck, L. J., Meier, R. E., Douglass, M. R., Proc. IEEE, 86, 1687 (1998).Google Scholar
2 Kiang, M.-H., Solgaard, O., Lau, K. Y., and Muller, R. S., Sens. Actuators, phys. A, 70, 195 (1998).Google Scholar
3 Mignardi, M. A., Solid State Technol. 63 (1994).Google Scholar
4 lee, K.-N., and Kim, Y.-K, J. Semicond. Technol. Sci., 1, 2, 132 (2001).Google Scholar
5 Sun, C., Fang, N., Wu, D.M., and Zhang, X., Sens. Actuators, phys. A, in press, (2005).Google Scholar
6 Nee, J. T., Conant, R. A., Muller, R. S., and Lau, K. Y., Proc. IEEE/LEOS Optical MEMS (2000).Google Scholar
7 Ryf, R. and Neilsen, D. T. et al. Proc. Opt. Fiber Commun. Conf. 410 (2002).Google Scholar
8 Lee, S.-S., Huang, L.-S., Kim, C.-J, and Wu, M. C., J. Lightwave Technol., 17, 1, 7 (1999).Google Scholar
9 Mi, B., Smith, D. A., Kahn, H., Merat, F. L., Heuer, A. H., and Philips, S. M., J. Microelectromech. Sys., 14, 1, 29 (2005).Google Scholar
10 Greywall, D., Busch, P. A., Pardo, F., Carr, D. W., Bogart, G., and Soh, H. T., J. Microelectromech. Sys., 12, 5, 708 (2003).Google Scholar
11 Hao, Z., Wingfield, B., Whitley, M., Brooks, Justi, and Hammer, J. A., J. Microelectromech. Sys., 12, 5 (2003).Google Scholar
12 Degani, O., Socher, E., Lipson, A., Leitner, T., Setter, D. J., Kaldor, S., and Nemirovsky, Y., J. Microelectromech. Sys., 7, 373 (1998).Google Scholar