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MOCVD of CuInE2 (Where E = S or Se) and Related Materials for Solar Cell Devices

Published online by Cambridge University Press:  10 February 2011

Michael Kemmler ,
Michael Lazell ,
Paul O'brien  and
David J. Otwaya
Michael Kemmler
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK
Michael Lazell
Affiliation:
Department of Chemistry, and The Manchester Materials Science Centre, Manchester University, Oxford Rd, Manchester, M13 9PLUK
Paul O'brien
Affiliation:
Department of Chemistry, and The Manchester Materials Science Centre, Manchester University, Oxford Rd, Manchester, M13 9PLUK Email addresses: p.obrien@ic.ac.uk
David J. Otwaya
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK Email addresses: d.j.otway@ic.ac.uk
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Abstract

Thin film(s) of chalcopyrite CuInE2(where E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors [In(E2CNMenHexyl)3] and [Cu(E2CNMenHexyl)2]. Similarly, thin films of ME (where M = Zn, Cd; E = S, Se) have been deposited from precursors of general formula [M(E2CNMenHex)2]x. Films were grown on glass between 400 - 500 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 147
Copyright
Copyright © Materials Research Society 2000

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