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Published online by Cambridge University Press: 15 February 2011
Bismuth-substituted yttrium iron garnet, BixY1−xFe5O12 thin films have been epitaxially grown on a Gd3Ga5O12 (111) substrate at 750°C under reduced pressure (6 Torr), with a deposition rate of 20∼50nm·min−1 by MOCVD. The maximum value of Faraday rotation was −7.5×104deg·cm−1at a Bi-content of 2.5 atoms per formula unit. The Figure of unit was 14.30 deg., which is significantly larger than that obtained by sputtering. On the other hand, cerium-substituted films could not be obtained even at elevated temperatures, 900°C.