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Modelling of the oxidation of Suspended Silicon Nanowires

Published online by Cambridge University Press:  01 February 2011

Pier-Francesco Fazzini ,
Caroline Bonafos ,
Alexandre Hubert ,
Jean-Pierre Colonna ,
Thomas Ernst ,
Marc Respaud  and
Florence Gloux
Pier-Francesco Fazzini
Affiliation:
fazzini@cemes.fr, CEMES-CNRS, Toulouse, France
Caroline Bonafos
Affiliation:
bonafos@cemes.fr, CEMES-CNRS, University of Toulouse, toulouse, France
Alexandre Hubert
Affiliation:
alexandre.hubert@cea.fr, CEA-LETI, Minatec, Grenoble, France
Jean-Pierre Colonna
Affiliation:
colonna@cea.fr, CEA-LETI, Minatec, Grenoble, France
Thomas Ernst
Affiliation:
thomas.ernst@cea.fr, CEA-LETI, Minatec, Grenoble, France
Marc Respaud
Affiliation:
respaud@insa-toulouse.fr, LPCNO, INSA, University of Toulouse, toulouse, France
Florence Gloux
Affiliation:
fgloux@cemes.fr, CEMES-CNRS, University of Toulouse, Toulouse, France
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Abstract

The oxidation of suspended Si nanowires is studied under wet and dry conditions. The nanowire characteristics are extracted from Electron Microscopy images. In parallel, the Deal and Grove model is extended to cylindrical geometry. The used model also assumes that stress effects reduce the oxidation rate and predicts the retardation of oxide growth on curved surface, leading to a self-limited process. The model predictions show a good agreement with experiments.

Keywords

nanostructureoxidationSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1144: Symposium LL – Nanowires–Systhesis, Properties, Assembly and Applications , 2008 , 1144-LL18-06
Copyright
Copyright © Materials Research Society 2009

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References

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