Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-10T10:23:57.469Z Has data issue: false hasContentIssue false
  • English
  • Français

Mortality Dependence of Cu Dual Damascene Interconnects onAdjacent Segment

Published online by Cambridge University Press:  17 March 2011

C.W. Chang ,
C.L. Gan ,
C.V. Thompson ,
K.L. Pey ,
W.K. Choi  and
N. Hwang
C.W. Chang
Affiliation:
Advanced Materials for Micro- and Nano-Systems, Singapore-MIT Alliance, 4, Engineering Drive 3, Singapore 117576
C.L. Gan
Affiliation:
Advanced Materials for Micro- and Nano-Systems, Singapore-MIT Alliance, 4, Engineering Drive 3, Singapore 117576 School of Materials Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798
C.V. Thompson
Affiliation:
Advanced Materials for Micro- and Nano-Systems, Singapore-MIT Alliance, 4, Engineering Drive 3, Singapore 117576 Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
K.L. Pey
Affiliation:
Advanced Materials for Micro- and Nano-Systems, Singapore-MIT Alliance, 4, Engineering Drive 3, Singapore 117576 School of Electrical & Electronics Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798
W.K. Choi
Affiliation:
Advanced Materials for Micro- and Nano-Systems, Singapore-MIT Alliance, 4, Engineering Drive 3, Singapore 117576 Department of Electrical and Computer Engineering, National University of Singapore, 4, Engineering Drive 3, Singapore, 117576
N. Hwang
Affiliation:
Microsystems, Modules & Components Laboratory, Institute of Microelectronics Singapore, 11, Science Park Road, Singapore Science Park II, Singapore 117685
Get access

Abstract

Three terminal ‘dotted-I’ interconnect structures, with vias at both endsand an additional via in the middle, were tested under a variety of testconditions. Failures (mortalities) were observed even when segments weretested under conditions that would not have led to failure in two-terminalstructures. Mortalities were found in right segments with jL values as low as 1250 A/cm, which is lower when compared to theimmortality condition (jL)cr of 3700 A/cm reported for similar via-terminated structures.Moreover, we found that the mortality of a dotted-I segment is dependent onthe direction and magnitude of the current in the adjacent segment. Theseresults suggest that there is not a definite value of the jL product that defines true immortality in individual segmentsthat are part of an interconnect tree. More importantly, the critical jL value for a single segment of Cu interconnects may be reducedor increased by an adjacent segment. Therefore independently determined (jL)cr values cannot be directly applied tointerconnects with branched segments, but rather the magnitude as well asthe direction of the current flow in the adjoining segments must be takeninto consideration in evaluating the immortality of interconnect segments inan interconnect network.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F7.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Semiconductor Industry Association Technology Roadmap, 2003 (http://public.itrs.net ).Google Scholar
2. Blech, I.A. and Herring, C., Appl. Phys. Lett. 29, 131 (1976).CrossRefGoogle Scholar
3. Filippi, R.G., Wachnick, R. A., Aochi, H., Lloyd, J. R., and Korhonen, M. A., Appl. Phys. Lett. 69, 2350 (1996).CrossRefGoogle Scholar
4. Wang, P.-C. and Filippi, R.G., Appl. Phys. Lett. 78, 3598 (2001).CrossRefGoogle Scholar
5. Lee, Ki-Don, Ogawa, Ennis T., Matsuhashi, Hideki, Justison, Patrick R., Ko, Kil-Soo and Ho, Paul S., Appl. Phys. Lett. 79, 3236 (2001).CrossRefGoogle Scholar
6. Hau-Riege, C.S., Marathe, A.P., Pham, V., Proc. of the Advanced Metallization Conf., 169 (2002)Google Scholar
7. Hau-Riege, S.P., J. Appl. Phys. 91, 2014 (2002).CrossRefGoogle Scholar
8. Gan, C.L., Thompson, C.V., Pey, K.L., Choi, W.K., Wei, F., Yu, B. and Hau-Riege, S.P., Mater. Res. Soc. Proc. 716, 431 (2002).CrossRefGoogle Scholar