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Nanostructured indium tin oxide for application in optoelectronic devices

Published online by Cambridge University Press:  01 February 2011

S. P. Fernando ,
K. D. Harris ,
N. J. Gerein  and
M. J. Brett
S. P. Fernando
Affiliation:
sumudu@ualberta.ca, University of Alberta, Electrical and Computer Engineering, 114 St - 89 Ave, Edmonton AB, T6G2E1, Canada
K. D. Harris
Affiliation:
Ken.Harris@nrc-cnrc.gc.ca, NRC National Institute for Nanotechnology, Edmonton AB, T6G2M9, Canada
N. J. Gerein
Affiliation:
ngerein@ualberta.ca, University of Alberta, Electrical and Computer Engineering, 114 St - 89 Ave, Edmonton AB, T6G2E1, Canada
M. J. Brett
Affiliation:
brett@ece.ualberta.ca, University of Alberta, Electrical and Computer Engineering, 114 St - 89 Ave, Edmonton AB, T6G2E1, Canada
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Abstract

The electrical resistivities of nanostructured films of indium tin oxide were measured. The films were prepared using glancing angle deposition, a physical vapour deposition technique. This technique was used to prepare nanostructured indium tin oxide thin films of various morphologies. Films consisting of vertical posts were electrically characterized using a probing station. Compared to a normally evaporated planar film, the nanostructured films were found to exhibit resistivities approximately two orders of magnitude greater. Development of the measurement technique is ongoing, and several ideas for improvement are described.

Keywords

electrical propertiesoptoelectronicnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1056: Symposium HH – Nanophase and Nanocomposite Materials V , 2007 , 1056-HH08-47
Copyright
Copyright © Materials Research Society 2008

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References

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