Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-15T06:58:06.883Z Has data issue: false hasContentIssue false
  • English
  • Français

Nd:YVO4 Laser Crystallization for Thin Film Transistors with a High Mobility

Published online by Cambridge University Press:  14 March 2011

Ralf Dassow ,
Jürgen R. Köhler ,
Melanie Nerding ,
Horst P. Strunk ,
Youri Helen ,
Karine Mourgues ,
Olivier Bonnaud ,
Tayeb Mohammed-Brahim  and
Jürgen H. Werner
Ralf Dassow
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik, Pfaffenwaldring 47, D-70569 Stuttgart, Germany, r.dassow@ipe.uni-stuttgart.de
Jürgen R. Köhler
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik, Pfaffenwaldring 47, D-70569 Stuttgart, Germany, r.dassow@ipe.uni-stuttgart.de
Melanie Nerding
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften, Lehrstuhl für Mikrocharakterisierung, Cauerstr. 6, D-91058 Erlangen, Germany
Horst P. Strunk
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften, Lehrstuhl für Mikrocharakterisierung, Cauerstr. 6, D-91058 Erlangen, Germany
Youri Helen
Affiliation:
Groupe de Microélectronique et Visualisation, Université, de Rennes 1, Campus de Beaulieu, F-35042 Rennes Cedex, France
Karine Mourgues
Affiliation:
Groupe de Microélectronique et Visualisation, Université, de Rennes 1, Campus de Beaulieu, F-35042 Rennes Cedex, France
Olivier Bonnaud
Affiliation:
Groupe de Microélectronique et Visualisation, Université, de Rennes 1, Campus de Beaulieu, F-35042 Rennes Cedex, France
Tayeb Mohammed-Brahim
Affiliation:
Groupe de Microélectronique et Visualisation, Université, de Rennes 1, Campus de Beaulieu, F-35042 Rennes Cedex, France
Jürgen H. Werner
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik, Pfaffenwaldring 47, D-70569 Stuttgart, Germany, r.dassow@ipe.uni-stuttgart.de
Get access

Abstract

We crystallize amorphous silicon films with a frequency doubled Nd:YVO4 laser operating at a repetition frequency of up to 50 kHz. A sequential lateral solidification process yields polycrystalline silicon with grains longer than 100 μm and a width between 0.27 and 1.7 μm depending on film thickness and laser repetition frequency. The average grain size is constant over the whole crystallized area of 25 cm2. Thin film transistors with n- type and p-type channels fabricated from the polycrystalline films have average field effect mobilities of μn = 467 cm2/Vs and μp = 217 cm2/Vs respectively. As a result of the homogeneous grain size distribution, the standard deviation of the mobility is only 5%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q9.3.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Stehle, M., J. Non-Cryst. Solids 218, 218 (1997).Google Scholar
2 Voutsas, A. T., Marmorstein, A. M., and Solanki, R., J. Electrochem. Soc. 146, 3500 (1999).Google Scholar
3 Kohno, A., Sameshima, T., Sano, N., Sekiya, M., and Hara, M., IEEE Trans. Electron. Devices 42, 251 (1995).Google Scholar
4 Levinson, J., Sheperd, F. R., Scanlon, P. J., Westwood, W. D., Este, G., and Ryder, M., J. Appl. Phys. 53, 1193 (1982).Google Scholar
5 Giust, G. K., and Sigmon, T. W., Appl. Phys. Lett. 70, 767 (1997).Google Scholar
6 Sposili, R. S., and Im, J. S., Appl. Phys. Lett. 69, 2864 (1996).Google Scholar
7 Helen, Y., Mourgues, K., Raoult, F., Mohammed-Brahim, T., Bonnaud, O., Rogel, R., Prochasson, S., Boher, P., and Zahorski, D., Thin Solid Films 337, 133 (1999).Google Scholar
8 Dassow, R., Köhler, J. R., Grauvogl, M., Bergmann, R. B., and Werner, J. H., Solid State Phenom. 67–68, 193 (1999).Google Scholar
9 unpublished.Google Scholar
10 Im, J. S., and Kim, H. J., Appl. Phys. Lett. 63, 1969 (1993).Google Scholar