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Near-Infrared Emission from a Porous Silicon Device

Published online by Cambridge University Press:  28 February 2011

J. Penczek ,
A. Knoesen ,
H. W. H. Lee  and
R. L. Smith
J. Penczek
Affiliation:
Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616
A. Knoesen
Affiliation:
Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616
H. W. H. Lee
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94551
R. L. Smith
Affiliation:
Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616
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Abstract

Visible to near-infrared emission is produced from a porous silicon device under current injection. The porous silicon emitter is fabricated by selectively under-etching a p-n junction. The device is rectifying when biased across the junction, and exhibits a region of negative differential resistance (NDR) at the higher current levels. Bright red-orange emission is observed along the length of the junction in forward bias, but most of the light is emitted in the near-infrared with a peak near 1.3 µm at 30 mA. The intensity of the visible component has an exponential dependence on photon energy. The optical and electrical properties of this device are presented and possible mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 641
Copyright
Copyright © Materials Research Society 1995

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References

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