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Neutral Beam Source Design and Beam Kinetic Energy Activated SiO2 Etching

Published online by Cambridge University Press:  25 February 2011

Lee Chen ,
Akihisa Sekiguchi  and
Dragan Podlesnik
Lee Chen
Affiliation:
IBM Technology Product, Hopewell Junction, NY, 12533
Akihisa Sekiguchi
Affiliation:
IBM Technology Product, Hopewell Junction, NY, 12533
Dragan Podlesnik
Affiliation:
IBM Technology Product, Hopewell Junction, NY, 12533
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Abstract

An unique method is used to produce a low energy nonthermalized fast neutral radical beam wliich can activate the SiO2 surface for chemical reaction at the desired incident energy. The fast neutral beam energy is continuously adjustable (2eV<Ek<200eV) and the beam flux is typically 5×1015cm−2 sec−1(∼4L). An uniform large diameter plasma is also made for the production of neutral beam covering 5”wafer and larger. Large diameter neutral beam single wafer reactor is feasible with off-the-shelf pumping technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 803
Copyright
Copyright © Materials Research Society 1993

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