Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-14T04:49:02.976Z Has data issue: false hasContentIssue false
  • English
  • Français

Novel Cubic ZnxMg1−xO Epitaxial Heterostructures on Si (100) Substrates

Published online by Cambridge University Press:  17 March 2011

A. Kvit ,
J. Narayan ,
A.K. Sharma ,
C. Jin ,
J.F. Muth ,
C.W. Teng  and
O.W. Holland
A. Kvit
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
J. Narayan
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
A.K. Sharma
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
C. Jin
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
J.F. Muth
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
C.W. Teng
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
O.W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6048.
Get access

Abstract

We have synthesized new cubic phase of ZnxMg1−xO alloy, which can be grown epitaxially on MgO (100) by lattice-matching epitaxy, and on Si (100) substrate by our domainmatching epitaxy for integration with silicon microelectronic devices. Cubic ZnxMg1−xO films on MgO (100) and Si (100) substrates were grown using a rotating target in a single chamber “insitu” pulsed-laser deposition system. Integration of ZnxMg1−xO films with silicon was accomplished via titanium nitride (TiN) buffer layers where four lattice constants of TiN match with three of the silicon during epitaxial growth via domain epitaxy. Rutherford backscattering/ion channeling techniques were used to determine chemical composition and crystalline quality of the films for x = 0.0-0.18. Detailed X-ray diffraction and transmission electron microscopy studies confirmed the epitaxial nature of ZnMgO/MgO (100) and ZnMgO/TiN/Si (100) heterostructures, and showed the formation of the Mg2−xZnxTiO4 spinel at the interface with TiN. Using optical transmission measurements, the band gap of cubic Zn0.18Mg0.82O film was estimated to be approximately 6.7 eV. The potential use of these alloys for optical devices in the ultraviolet range is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.53
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B 10, 1237 (1992).Google Scholar
2. Nakamura, S., Science 281, 956 (1998).Google Scholar
3. Pearton, S.J., Zolper, J.C., Shul, R.J., and Ren, F., J. Appl. Phys. 86, 1 (1999).Google Scholar
4. Jain, S.C., Willander, M., Narayan, J., and Overstraeten, R. Van, J. Appl. Phys. (review) 87, 965 (2000).Google Scholar
5. Narayan, J., Tiwari, P., Chen, X., Singh, J., Chowdhary, R. and Zheleva, T., Appl. Phys. Lett. 61, 1290 (1992); Domain Epitaxy U.S. Patent # 5,406,123 (April 11, 1995).Google Scholar
6. Dovidenko, K., Oktyabrsky, S., Narayan, J., and Razeghi, M., J. Appl. Phys. 79, 2439 (1996).Google Scholar
7. Bagnall, D.M., Chen, Y.F., Zhu, Z., Yao, T., Koyama, S., Shen, M. Y., and Goto, T., Appl. Phys. Lett., 70, 2230 (1997).Google Scholar
8. Tang, Z.K., Wong, G.K.L., Yu, P., Kawasaki, M., Ohtomo, A., Koinuma, H. and Segawa, Y., Appl. Phys. Lett., 72, 3270 (1998).Google Scholar
9. Muth, J.F., Kolbas, R.M., Shrama, A.K., Oktyabrsky, S., and Narayan, J., J. Appl. Phys., 85, 7884 (1999).Google Scholar
10. Narayan, J., Dovidenko, K., Sharma, A.K., and Oktyabrsky, S., J. Appl. Phys., 84, 2597 (1998).Google Scholar
11. Sharma, A.K., Narayan, J., Muth, J.F., Teng, C.W., Jin, C., Kvit, A., Kolbas, R.M., and Holland, O.W., Appl. Phys. Lett., 75, 3327 (1999). A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, Appl. Phys. Lett., 72, 2466 (1998).Google Scholar
12. Segnit, E.R. and Holland, A.E., J. Am. Ceram. Soc. 48, 412 (1965).Google Scholar
13.14Teng, C.W., Muth, J.F., Özgür, Ü., Bergmann, M.J., Everitt, H.O., Sharma, A.K., Jin, C., and Narayan, J., Appl. Phys. Lett. 76, 979 (2000).Google Scholar