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A Novel Organic Low-k Film Deposited by Plasma-Enhanced Co-Polymerization

Published online by Cambridge University Press:  01 February 2011

Nobutaka Kunimi ,
Jun Kawahara ,
Keizo Kinoshita ,
Akinori Nakano ,
Masashi Komatsu  and
Takamaro Kikkawa
Nobutaka Kunimi
Affiliation:
MIRAI-ASET, Tsukuba, Japan
Jun Kawahara
Affiliation:
MIRAI-ASET, Tsukuba, Japan Graduate School of Advanced Sciences and Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Keizo Kinoshita
Affiliation:
MIRAI-ASET, Tsukuba, Japan Graduate School of Advanced Sciences and Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Akinori Nakano
Affiliation:
MIRAI-ASET, Tsukuba, Japan
Masashi Komatsu
Affiliation:
MIRAI-ASET, Tsukuba, Japan
Takamaro Kikkawa
Affiliation:
MIRAI-ASRC-AIST, Tsukuba, Japan RCNS, Hiroshima Univ., Higashi-Hiroshima, Japan
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Abstract

A new organic precursor was designed and synthesized in order to form polymer films having low dielectric constants by a plasma-enhanced co-polymerization (PCP) technology. The organic monomer features a large aliphatic hydrocarbon structure, tricyclodecane (TCD) group. Optimized polymer films deposited from the monomer had dielectric constants less than 2.5. A solid 13C-NMR spectrum showed that the TCD moiety in the precursor was included in the polymer without changing the structure. The effect of the deposition temperature on the film structure was studied by analyzing Raman spectra. It was revealed that the dielectric constant is strongly associated with sp2 carbon content in the TCD-based polymer films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B8.1
Copyright
Copyright © Materials Research Society 2005

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References

1. Burkey, D. D. and Gleason, K. K., J. Vac. Sci. Technol. A 22(1), 61 (2004)Google Scholar
2. Fujii, N., Yamada, K., Oku, Y., Hata, N., Seino, Y., Negoro, C. and Kikkawa, T., Mat. Res. Soc. Symp. Proc. 812, 43 (2004)Google Scholar
3. Kikkawa, T., Ext. Abst. ADMETA 2003: Assian session, 1-2, 4 (2003)Google Scholar
4. Kawahara, J., Nakano, A., Kunimi, N., Kinoshita, K., Hayashi, Y., Ishikawa, A., Seino, Y., Ogata, T., Takahashi, H., Sonoda, Y., Yoshino, T., Goto, T., Takada, S., Ichikawa, R., Miyoshi, H., Matsuo, H., Adachi, S. and Kikkawa, T., Technical Dig. IEDM 2003, 6-2, 143 (2003)Google Scholar
5. Kinoshita, K., Proc. Plasma Science Symp. 2005 / 22nd Symp. Plasma Processing, 485, (2005)Google Scholar
6. Greene, T. W. and Wuts, P. G. M., Protective Groups in Organic Synthesis 3rd. Ed., John Wiley & Sons, Inc., 116 (1999)Google Scholar
7. Kinoshita, K., Nakano, A., Kunimi, N., Shimoyama, M., Kawahara, J., Miyoshi, H., Seino, Y., Takasu, Y., Ichikawa, R., Komatsu, M., Hayashi, Y. and Kikkawa, T., Proc. AMC 2004, P. 14, (2004)Google Scholar
8. Kim, J. Y., Hwang, M. S., Kim, Y.H., Kim, H. J. and Lee, Y, J. Appl. Phys. 90(5), 2469 (2001)Google Scholar