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Ohmic contact to GaN grown by MOCVD

Published online by Cambridge University Press:  10 February 2011

Dae-Woo Kim ,
Hong Koo Baik ,
Cha Yeon Kim ,
Sung Woo Kim  and
Chang Hee Hong
Dae-Woo Kim
Affiliation:
Thin Film Materials Lab., School of Materials Science & Engineering, Yonsei University, Seoul 120-749, Korea
Hong Koo Baik
Affiliation:
Thin Film Materials Lab., School of Materials Science & Engineering, Yonsei University, Seoul 120-749, Korea
Cha Yeon Kim
Affiliation:
LG Corporate Institute of Technology 16 Woomyeon-Dong, Secho-Gu, Seoul 137-140, Korea
Sung Woo Kim
Affiliation:
LG Corporate Institute of Technology 16 Woomyeon-Dong, Secho-Gu, Seoul 137-140, Korea
Chang Hee Hong
Affiliation:
LG Corporate Institute of Technology 16 Woomyeon-Dong, Secho-Gu, Seoul 137-140, Korea
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Abstract

We investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6 Ωcm2 was obtained for Au(1000 Å)/Ni(400 Å)/Ti(400 Å)/Si(1460 Å)/Ti(150 Å) after annealing at 900 °C for 3min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1083
Copyright
Copyright © Materials Research Society 1998

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