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Optical Properties of Zinc Oxide Quantum Dots Embedded Films by Metal Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

S. T. Tan ,
X. W. Sun ,
X. H. Zhang ,
B. J. Chen  and
S. J. Chua
S. T. Tan
Affiliation:
ta0001am@ntu.edu.sg, Nanyang Technological University, Ion Beam Processing Lab,, S1-B3a-01,, Nanyang Avenue., Singapore, Singapore, 639798, Singapore
X. W. Sun*
Affiliation:
exwsun@ntu.edu.sg, Nanyang Technological University, Singapore
X. H. Zhang
Affiliation:
xh-zhang@imre.a-star.edu.sg, Institute of Materials Research and Engineering, Singapore
B. J. Chen
Affiliation:
ebjchen@ntu.edu.sg, Nanyang Technological University, Singapore
S. J. Chua
Affiliation:
elecsj@nus.edu.sg, Institute of Materials Research and Engineering, Singapore
*
* Author to whom correspondence should be addressed; electronic mail: exwsun@ntu.edu.sg
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Abstract

Zinc oxide (ZnO) quantum dots (QDs) embedded films were fabricated on silicon substrates by metal organic chemical vapor deposition at 350°C. The QDs can be obtained in a matrix of amorphous ZnO films by introducing a large amount of precursors. The size of the QDs ranged from 3 to 12 nm, which was estimated by high-resolution transmission electron microscopy. The photoluminescence measured at 80 K showed that the emission of QDs embedded film ranged from 3.0 to 3.6 eV. The broad near-band-edge emission is due to the quantum confinement effect of the QDs. The quantum confinement effect of the QDs disappears after the post-growth annealing due to the ripening of QDs.

Keywords

II-VImetalorganic depositionoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-05
Copyright
Copyright © Materials Research Society 2006

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References

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