Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-14T07:05:38.846Z Has data issue: false hasContentIssue false
  • English
  • Français

Organic Thin-Film Transistor Sensors: Interface Dependent and Gate Bias Enhanced Responses

Published online by Cambridge University Press:  01 February 2011

Maria C. Tanese ,
Daniel Fine ,
Ananth Dodabalapur  and
Luisa Torsi
Maria C. Tanese
Affiliation:
Dipartimento di Chimica and Centro di Eccellenza TIRES - Università degli Studi di Bari Bari (Italy)
Daniel Fine
Affiliation:
University of Texas at Austin, Microelectronics Research Center, Austin, Texas (USA)
Ananth Dodabalapur
Affiliation:
University of Texas at Austin, Microelectronics Research Center, Austin, Texas (USA)
Luisa Torsi
Affiliation:
Dipartimento di Chimica and Centro di Eccellenza TIRES - Università degli Studi di Bari Bari (Italy)
Get access

Abstract

Organic Thin Film Transistors are a new class of sensors potentially capable of outperforming chemiresistors. They can be operated at room temperature, offer the advantage of remarkable response repeatability and can function as multi-parameter sensors. In this paper evidence of OTFT response dependence on important parameters such as the chemical nature of the organic semiconductor active layer and the gate-dielectric/organic-semiconductor interface are produced. A sizable response enhancement of an OTFT sensor operated in the enhancement mode is also presented indicating that an OTFT can in principle lead to a lower detection limit than a resistor-type sensor with the same organic semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I8.6
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Laurs, H. and Heiland, G., Thin Solid Films 149, 129–142, (1987).Google Scholar
2 Assadi, A., Gustafsson, G., Willander, M., Svensson, C. and Inganas, O., Synthetic Metals 37, 123–130, (1990).Google Scholar
3 Ohmori, Y., Takahashi, H., Muro, K., Uchida, M., Kawai, T. and Yoshino, K., Japanese Journal of Applied Physics, Part 2: Letters 30, L1247–L1249, (1991).Google Scholar
4 Tsumura, A., Koezuka, H. and Ando, T., Appl. Phys. Lett. 49, 1210–1212, (1986).Google Scholar
5 Bartic, C., Campitelli, A. and Borghs, G., Appl. Phys. Letters 82, 475–477, (2003).Google Scholar
6 Bartic, C., Palan, B., Campitelli, A. and Borghs, G., Sensors and Actuators B 83, 115–122, (2002).Google Scholar
7 Bouvet, M., Guillod, G., Leroy, A., Maillard, A., Spirkovitch, S. and Tournilhac, F.-G., Sensors and Actuators B 73, 63–70, (2001).Google Scholar
8 Bouvet, M., Leroy, A., Simon, J., Tournilhac, F., Guillod, G., Lessnick, P., Maillard, A., Spirkovitch, S., Debliquy, M., Haan, A. de and Decroly, A., Sensors and Actuators B 72, 86–93, (2001).Google Scholar
9 Crone, B., Dodabalapur, A., Sarpeshkar, R., Gelperin, A., Katz, H. E. and Bao, Z., Journal of Applied Physics 91, 10140–10146, (2002).Google Scholar
10 Crone, B., Dodabalapur, A., Gelperin, A., Torsi, L., Katz, H.E., Lovinger, A. J., Bao, Z., Appl. Phys. Lett. 78, 2229–2231, (2001).Google Scholar
11 Hu, W., Liu, Y., Xu, Y., Liu, S., Zhou, S., Zhu, D., Xu, B., Bai, C. and Wang, C., Thin Solid Films 360, 256–260, (2000).Google Scholar
12 Nilsson, D., Kugler, T., Svensson, P.-O. and Berggren, M., Sensors and Actuators B 86, 193–197, (2002).Google Scholar
13 Someya, T., Katz, H. E., Gelperin, A., Lovinger, A. J. and Dodabalapur, A., Appl. Phys. Lett. 81, 3079–3081, (2002).Google Scholar
14 Someya, T., Sekitani, T., Iba, S., Kato, Y., Kawaguchi, H. and Sakurai, T.,. large-area, A, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications. Proceedings of the National Academy of Sciences of the United States of America 101, 9966–9970, (2004).Google Scholar
15 Someya, T., Small, J., Kim, P., Nuckolls, C. and J. Yardley, T., Nano Letters 3, 877–881, (2003).Google Scholar
16 Tanese, M. C., Torsi, L., Cioffi, N., Colangiuli, D., Farinola, G. M., Babudri, F., Naso, F., Giangregorio, M. M., Zotti, L. A., Sabbatini, L. and Zambonin, P. G., Sensors and Actuators B 100, 17–21, (2004).Google Scholar
17 Torsi, L., Dodabalapur, A., Cioffi, N., Sabbatini, L. and Zambonin, P. G., Sensors and Actuators B 77, 7–11, (2001).Google Scholar
18 Torsi, L., Dodabalapur, A., Sabbatini, L. and Zambonin, P. G., Sensors and Actuators B 67, 312–316, (2000).Google Scholar
19 Torsi, L., Lovinger, A. J., Crone, B., Someya, T., Dodabalapur, A., Katz, H. E. and Gelperin, A., J. Phys. Chem. B 106, 12.563–12.568, (2002).Google Scholar
20 Torsi, L., Tanese, M. C., Cioffi, N., Gallazzi, M. C., Sabbatini, L. and Zambonin, P.G., Sensors and Actuators B 98, 204–207, (2004).Google Scholar
21 Torsi, L., Tanese, M. C., Cioffi, N., Gallazzi, M. C., Sabbatini, L., Zambonin, P. G., Raos, G., Meille, S. V., Giangregorio, M. M., J. Phys. Chem B 107, 7589–7594, (2003).Google Scholar
22 Xie, D., Jiang, Y., Pan, W. and Li, Y., Thin Solid Films 424, 247–252, (2003).Google Scholar
23 Zhu, Z-T., Mason, J. T., Dieckermann, R. and Malliaras, G., Appl. Phys. Lett. 81, 4643–4645, (2002).Google Scholar
24 Zhu, Z.-T., Mabeck, J. T., Zhu, C., Cady, N. C., Batt, C. A. and Malliaras, G., ChemComm 13, 1556–1557, (2004).Google Scholar
25 Fine, D., Cauble, D., Jung, T., Seggern, H. von, Krische, M., Dodabalapur, A., presented at APS March Meeting 2003 (unpublished).Google Scholar
26 Horowitz, G., Adv. Mater. 10, 365–377, (1998).Google Scholar
27 Bao, Z., Kuch, V., Roger, J. A. and Paczkowski, M. A., Adv. Func. Mat. 12, 526–531, (2002).Google Scholar
28 Powell, M. J., Philosophical Magazine A: Physics of Condensed Matter: Structure, Defects and Mechanical Properties, 43, 93–103, (1981).Google Scholar