Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-28T22:34:57.403Z Has data issue: false hasContentIssue false

Out-of-Plane and In-Plane Crystalline Orientations of Oxide Heterostructures of LSMO/ZnO

Published online by Cambridge University Press:  13 July 2012

Kenichi Uehara
Affiliation:
Mie University, 1577 Kurima, Tsu, Mie 514-8507, Japan.
Sanapa Lakshmi Reddy
Affiliation:
Department of Physics, S.V.D. College, Kadapa, India.
Akira Okada
Affiliation:
Mie University, 1577 Kurima, Tsu, Mie 514-8507, Japan.
Miyoshi Yokura
Affiliation:
Mie University, 1577 Kurima, Tsu, Mie 514-8507, Japan. Adwel R&D Co., Ltd., Ritto City, Shiga, Japan.
Shintaro Kobayashi
Affiliation:
Rigaku Corp. XRL, Bunkyo-ku, Tokyo, Japan.
Katsuhiko Inaba
Affiliation:
Rigaku Corp. XRL, Bunkyo-ku, Tokyo, Japan.
Tomohiko Nakajima
Affiliation:
Nat. Inst. AIST, Tsukuba, Ibaraki, Japan.
Tetsuo Tsuchiya
Affiliation:
Nat. Inst. AIST, Tsukuba, Ibaraki, Japan.
Kazuhiro Endo
Affiliation:
Kanazawa Inst. Tech., Nonoichi, Ishikawa, Japan.
Tamio Endo
Affiliation:
Mie University, 1577 Kurima, Tsu, Mie 514-8507, Japan.
Get access

Abstract

Hexagonal ZnO was grown on hexagonal (001) sapphire substrate, then cubic La(Sr)MnO3(LSMO) was grown on ZnO underlayer by ion beam sputtering at substrate temperatures of 550-750°C to obtain double-layer of LSMO/ZnO. Out-of-plane (001) oriented ZnO was grown with in-plane orientation of [10-10](0001)ZnO//[11-20](0001)sapphire. Mixed phase of LSMO with out-of-plane (001), (110) and (111) orientations was grown on (001) ZnO usually. However each single phase of LSMO could be grown by controlling deposition conditions. The LSMO grains have their in-plane orientations of [110](110)LSMO //[10-10](0001)ZnO and [110](111)LSMO//[11-20](0001)ZnO.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Endo, T., Uehara, K., Yoshii, T., Yokura, M., Zhu, H., Nogues, J., Colino, J., and Endo, K., Trans. Mat. Res. Soc. Japan 35[4], 727738 (2010).CrossRefGoogle Scholar
Lord, K., Hunter, D., Williams, T. M., and Paradhan, A. K., Appl. Phys. Lett. 89, 052116 (2006).CrossRefGoogle Scholar
Zhang, Z., Sun, Y., Zhao, Y., Li, G., and Wu, T., Appl. Phys. Lett. 92, 103113 (2008).CrossRefGoogle Scholar
Cho, D-H., Kim, J-H., Moona, B-M., Jo, Y-D., and Koo, S-M., Appl. Surface Sci. 255, 34803484 (2009).CrossRefGoogle Scholar